60 citations · 62 across the 5 of their papers we have counts for
7 papers
Polariton lasing in AlGaN microring with GaN/AlGaN quantum wells
Anthonin Delphan, Maxim N. Makhonin, Tommi Isoniemi +7
Microcavity polaritons are strongly interacting hybrid light-matter quasiparticles, which are promising for the development of novel light sources and active photonic devices. Here…
Single photon emission and recombination dynamics in self-assembled GaN/AlN quantum dots
Johann Stachurski, Sebastian Tamariz, Gordon Callsen +2
III-nitride quantum dots (QDs) are a promising system actively studied for their ability to maintain single photon emission up to room temperature. Here, we report on the evolution…
Imaging non-radiative point defects buried in quantum wells using cathodoluminescence
Thomas Weatherley, Wei Liu, Vitaly Osokin +5
Crystallographic point defects (PDs) can dramatically decrease the efficiency of optoelectronic semiconductor devices, many of which are based on quantum well (QW) heterostructures…
Towards bright and pure single photon emitters at 300 K based on GaN quantum dots on silicon
Sebastian Tamariz, Gordon Callsen, Johann Stachurski +3
Quantum dots (QDs) based on III-nitride semiconductors are promising for single photon emission at non-cryogenic temperatures due to their large exciton binding energies. Here, we…
Probing alloy formation using different excitonic species: The particular case of InGaN
Gordon Callsen, Raphaël Butté, Nicolas Grandjean
Since the early 1960s, alloys are commonly grouped into two classes, featuring bound states in the bandgap (I) or additional, non-discrete band states (II). Microscopic material pa…
Intrinsic degradation mechanism of nearly lattice-matched InAlN layers grown on GaN substrates
Guillaume Perillat-Merceroz, Gatien Cosendey, Jean-François Carlin +2
Thanks to its high refractive index contrast, band gap and polarization mismatch compared to GaN, In0.17Al0.83N layers lattice-matched to GaN are an attractive solution for applica…