69 citations · 309 across the 14 of their papers we have counts for
14 papers
Excitonic interplay between surface polar III-nitride quantum wells and MoS monolayer
Danxuan Chen, Jin Jiang, Thomas F. K. Weatherley +3
III-nitride wide bandgap semiconductors exhibit large exciton binding energies, preserving strong excitonic effects at room temperature. On the other hand, semiconducting two-dimen…
Polariton lasing in AlGaN microring with GaN/AlGaN quantum wells
Anthonin Delphan, Maxim N. Makhonin, Tommi Isoniemi +7
Microcavity polaritons are strongly interacting hybrid light-matter quasiparticles, which are promising for the development of novel light sources and active photonic devices. Here…
Single photon emission and recombination dynamics in self-assembled GaN/AlN quantum dots
Johann Stachurski, Sebastian Tamariz, Gordon Callsen +2
III-nitride quantum dots (QDs) are a promising system actively studied for their ability to maintain single photon emission up to room temperature. Here, we report on the evolution…
Near ultraviolet photonic integrated lasers based on silicon nitride
Anat Siddharth, Thomas Wunderer, Grigory Lihachev +10
Low phase noise lasers based on the combination of III-V semiconductors and silicon photonics are well established in the near-infrared spectral regime. Recent advances in the deve…
Imaging non-radiative point defects buried in quantum wells using cathodoluminescence
Thomas Weatherley, Wei Liu, Vitaly Osokin +5
Crystallographic point defects (PDs) can dramatically decrease the efficiency of optoelectronic semiconductor devices, many of which are based on quantum well (QW) heterostructures…
Ultrafast-nonlinear ultraviolet pulse modulation in an AlInGaN polariton waveguide operating up to room temperature
Davide Maria Di Paola, Paul M. Walker, Ruggero P. A. Emmanuele +9
Ultrafast nonlinear photonics enables a host of applications in advanced on-chip spectroscopy and information processing. These rely on a strong intensity dependent (nonlinear) ref…
Towards bright and pure single photon emitters at 300 K based on GaN quantum dots on silicon
Sebastian Tamariz, Gordon Callsen, Johann Stachurski +3
Quantum dots (QDs) based on III-nitride semiconductors are promising for single photon emission at non-cryogenic temperatures due to their large exciton binding energies. Here, we…
Probing alloy formation using different excitonic species: The particular case of InGaN
Gordon Callsen, Raphaël Butté, Nicolas Grandjean
Since the early 1960s, alloys are commonly grouped into two classes, featuring bound states in the bandgap (I) or additional, non-discrete band states (II). Microscopic material pa…
Propagating Polaritons in III-Nitride Slab Waveguides
Joachim Ciers, Jonas G. Roch, Jean-François Carlin +3
We report on III-nitride waveguides with c-plane GaN/AlGaN quantum wells in the strong light-matter coupling regime supporting propagating polaritons. They feature a normal mode sp…
Efficient continuous-wave nonlinear frequency conversion in high-Q Gallium Nitride photonic crystal cavities on Silicon
Mohamed Sabry Mohamed, Angelica Simbula, Jean-François Carlin +6
We report on nonlinear frequency conversion from the telecom range via second harmonic generation (SHG) and third harmonic generation (THG) in suspended gallium nitride slab photon…
On thresholdless lasing features in high- nitride nanobeam cavities: a quantum optical study
Stefan T. Jagsch, Noelia Vico Triviño, Frederik Lohof +11
Exploring the limits of spontaneous emission coupling is not only one of the central goals in the development of nanolasers, it is also highly relevant regarding future large-scale…
Gallium nitride L3 photonic crystal cavities with an average quality factor of 16,900 in the near infrared
Noelia Vico Triviño, Momchil Minkov, Giulia Urbinati +5
Photonic crystal point-defect cavities were fabricated in a GaN free-standing photonic crystal slab. The cavities are based on the popular L3 design, which was optimized using an a…
Intrinsic degradation mechanism of nearly lattice-matched InAlN layers grown on GaN substrates
Guillaume Perillat-Merceroz, Gatien Cosendey, Jean-François Carlin +2
Thanks to its high refractive index contrast, band gap and polarization mismatch compared to GaN, In0.17Al0.83N layers lattice-matched to GaN are an attractive solution for applica…
Superfluorescent emission in electrically pumped semiconductor laser
D. L. Boiko, X. Zeng, T. Stadelmann +7
We report superfluorescent (SF) emission in electrically pumped InGaN/InGaN QW lasers with saturable absorber. In particular, we observe a superlinear growth of the peak power of S…