56 citations · 79 across the 3 of their papers we have counts for
3 papers
Excitonic interplay between surface polar III-nitride quantum wells and MoS monolayer
Danxuan Chen, Jin Jiang, Thomas F. K. Weatherley +3
III-nitride wide bandgap semiconductors exhibit large exciton binding energies, preserving strong excitonic effects at room temperature. On the other hand, semiconducting two-dimen…
Optical and thermal characterization of a group-III nitride semiconductor membrane by microphotoluminescence spectroscopy and Raman thermometry
Mahmoud Elhajhasan, Wilken Seemann, Katharina Dudde +9
We present the simultaneous optical and thermal analysis of a freestanding photonic semiconductor membrane made from wurtzite III-nitride material. By linking micro-photoluminescen…
Imaging non-radiative point defects buried in quantum wells using cathodoluminescence
Thomas Weatherley, Wei Liu, Vitaly Osokin +5
Crystallographic point defects (PDs) can dramatically decrease the efficiency of optoelectronic semiconductor devices, many of which are based on quantum well (QW) heterostructures…