76 citations · 235 across the 14 of their papers we have counts for
14 papers
Quasi van der Waals Epitaxy of Rhombohedral-stacked Bilayer WSe2 on GaP(111) Heterostructure
Aymen Mahmoudi, Meryem Bouaziz, Niels Chapuis +11
The growth of bilayers of two-dimensional (2D) materials on conventional 3D semiconductors results in 2D/3D hybrid heterostructures, which can provide additional advantages over mo…
Intrinsic defects and mid-gap states in quasi-one-dimensional Indium Telluride
Meryem Bouaziz, Aymen Mahmoudi, Geoffroy Kremer +9
Recently, intriguing physical properties have been unraveled in anisotropic semiconductors, in which the in-plane electronic band structure anisotropy often originates from the low…
Quantum Confinement and Electronic Structure at the Surface of van der Waals Ferroelectric α-InSe
Geoffroy Kremer, Aymen Mahmoudi, Adel M'Foukh +11
Two-dimensional (2D) ferroelectric (FE) materials are promising compounds for next-generation nonvolatile memories, due to their low energy consumption and high endurance. Among th…
Unidirectional Rashba Spin Splitting in Single Layer WSSe alloy
Jihene Zribi, Debora Pierucci, Federico Bisti +12
Atomically thin two-dimensional (2D) layered semiconductors such as transition metal dichalcogenides (TMDs) have attracted considerable attention due to their tunable band gap, int…
Evidence for Highly p-type doping and type II band alignment in large scale monolayer WSe2 /Se-terminated GaAs heterojunction grown by Molecular beam epitaxy
Debora Pierucci, Aymen Mahmoudi, Mathieu Silly +10
Two-dimensional materials (2D) arranged in hybrid van der Waals (vdW) heterostructures provide a route toward the assembly of 2D and conventional III-V semiconductors. Here, we rep…
Hybridization and localized flat band in the WSe2/MoSe2 heterobilayer grown by molecular beam epitaxy
Lama Khalil, Debora Pierucci, Emilio Velez +9
Nearly localized moire flat bands in momentum space, arising at particular twist angles, are the key to achieve correlated effects in transition-metal dichalcogenides. Here, we use…
Indirect to direct band gap crossover in two-dimensional WS2(1-x)Se2x alloys
Cyrine Ernandes, Lama Khalil, Hela Almabrouk +12
In atomically thin transition metal dichalcogenide semiconductors, there is a crossover from indirect to direct bandgap as the thickness drops to one monolayer, which comes with a…
Quantitative Assessment of Carrier Density by Cathodoluminescence. II. GaAs nanowires
Hung-Ling Chen, Romaric De Lépinau, Andrea Scaccabarozzi +4
Precise control of doping in single nanowires (NWs) is essential for the development of NW-based devices. Here, we investigate a series of MBE-grown GaAs NWs with Be (p-type) and S…
Quantitative Assessment of Carrier Density by Cathodoluminescence. I. GaAs thin films and modeling
Hung-Ling Chen, Andrea Scaccabarozzi, Romaric De Lépinau +5
Doping is a fundamental property of semiconductors and constitutes the basis of modern microelectronic and optoelectronic devices. Their miniaturization requires contactless charac…
Developing a Purely Visual Based Obstacle Detection using Inverse Perspective Mapping
Julian Nubert, Niklas Funk, Fabio Meier +1
Our solution is implemented in and for the frame of Duckietown. The goal of Duckietown is to provide a relatively simple platform to explore, tackle and solve many problems linked…
Interface Dipole and Band Bending in Hybrid p-n Heterojunction MoS2/GaN(0001)
Hugo Henck, Zeineb Ben Aziza, Olivia Zill +15
Hybrid heterostructures based on bulk GaN and two-dimensional (2D) materials offer novel paths toward nanoelectronic devices with engineered features. Here, we study the electronic…
A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates
D. Kundys, D. Sutherland, M. Davies +8
In this paper we report on a comparative study of the low temperature emission and polarisation properties of InGaN/GaN quantum wells (QWs) grown on nonpolar a-plane and m-plane fr…
Structural, electronic, and optical properties of -plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory
S. Schulz, D. P. Tanner, E. P. O'Reilly +13
In this paper we present a detailed analysis of the structural, electronic, and optical properties of an -plane (In,Ga)N/GaN quantum well structure grown by metal organic vapor…
Non-polar (11-20) InGaN quantum dots with short exciton lifetimes grown by metal-organic vapor phase epitaxy
Tongtong Zhu, Fabrice Oehler, Benjamin P. L. Reid +4
We report on the optical characterization of non-polar a-plane InGaN quantum dots (QDs) grown by metal-organic vapor phase epitaxy using a short nitrogen anneal treatment at the gr…