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20182023
most citedQuantum Confinement and Electronic Structure at the Surface of van der Waals Ferroelectric α-InSe

21 citations · 29 across the 7 of their papers we have counts for

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Showing cond-mat.mtrl-sciShow all

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cond-mat.mtrl-sci2023

Intrinsic defects and mid-gap states in quasi-one-dimensional Indium Telluride

Meryem Bouaziz, Aymen Mahmoudi, Geoffroy Kremer +9

Recently, intriguing physical properties have been unraveled in anisotropic semiconductors, in which the in-plane electronic band structure anisotropy often originates from the low…

cond-mat.mtrl-sci202321 cited

Quantum Confinement and Electronic Structure at the Surface of van der Waals Ferroelectric α-InSe

Geoffroy Kremer, Aymen Mahmoudi, Adel M'Foukh +11

Two-dimensional (2D) ferroelectric (FE) materials are promising compounds for next-generation nonvolatile memories, due to their low energy consumption and high endurance. Among th…

cond-mat.mtrl-sci20228 cited

Unidirectional Rashba Spin Splitting in Single Layer WSSe alloy

Jihene Zribi, Debora Pierucci, Federico Bisti +12

Atomically thin two-dimensional (2D) layered semiconductors such as transition metal dichalcogenides (TMDs) have attracted considerable attention due to their tunable band gap, int…

cond-mat.mtrl-sci2022

Hybridization and localized flat band in the WSe2/MoSe2 heterobilayer grown by molecular beam epitaxy

Lama Khalil, Debora Pierucci, Emilio Velez +9

Nearly localized moire flat bands in momentum space, arising at particular twist angles, are the key to achieve correlated effects in transition-metal dichalcogenides. Here, we use…

cond-mat.mtrl-sci2018

Interface Dipole and Band Bending in Hybrid p-n Heterojunction MoS2/GaN(0001)

Hugo Henck, Zeineb Ben Aziza, Olivia Zill +15

Hybrid heterostructures based on bulk GaN and two-dimensional (2D) materials offer novel paths toward nanoelectronic devices with engineered features. Here, we study the electronic…