Heterostructured hBN-BP-hBN Nanodetectors at THz Frequencies
arXiv:1805.01161 · doi:10.1002/adma.201601736
Abstract
Artificial semiconductor heterostructures played a pivotal role in modern electronic and photonic technologies, providing a highly effective mean for the manipulation and control of carriers, from the visible to the Terahertz (THz) frequency range. Despite the exceptional versatility, they commonly require challenging epitaxial growth procedures due to the need of clean and abrupt interfaces, which proved to be a major obstacle for the realization of room-temperature (RT), high-efficiency devices, like source, detectors or modulators, especially in the far-infrared. Two-dimensional (2D) layered materials, like graphene and phosphorene, recently emerged as a reliable, flexible and versatile alternative for devising efficient RT detectors operating at Terahertz frequencies. We here combine the benefit of the heterostructure architecture with the exceptional technological potential of 2D layered nanomaterials; by reassembling the thin isolated atomic planes of hexagonal borum nitride (hBN) with a few layer phosphorene (black phosphorus (BP)) we mechanically stacked hBN/BP/hBN heterostructures to devise high-efficiency THz photodetectors operating in the 0.3-0.65 THz range from 4K to 300K with a record SNR=20000.
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Cited by in corpus (8)
- Field-effect transistors of high-mobility few-layer SnSe
- Thermoelectric terahertz photodetectors based on selenium-doped black phosphorus flakes
- Rotationally Aligned Hexagonal Boron Nitride on Sapphire by High-Temperature Molecular Beam Epitaxy
- Tailored nano-electronics and photonics with two-dimensional materials at terahertz frequencies
- Universal fluctuations around typicality for quantum ergodic systems
- Theory of the in-plane photoelectric effect in two-dimensional electron systems
- Band gap reconstruction at the interface between black phosphorus and a gold electrode
- Dielectric properties of graphene on transition metal dichalcogenide substrate