Template-assisted scalable nanowire networks

Abstract

Topological qubits based on Majorana fermions have the potential to revolutionize the emerging field of quantum computing by making information processing significantly more robust to decoherence. Nanowires (NWs) are a promising medium for hosting these kinds of qubits, though branched NWs are needed to perform qubit manipulations. Here we report gold-free templated growth of III-V NWs by molecular beam epitaxy using an approach that enables patternable and highly regular branched NW arrays on a far greater scale than what has been reported thus far. Our approach relies on the lattice-mismatched growth of InAs on top of defect-free GaAs nanomembranes (NMs) yielding laterally-oriented, low-defect InAs and InGaAs NWs whose shapes are determined by surface and strain energy minimization. By controlling NM width and growth time, we demonstrate the formation of compositionally graded NWs with cross-sections less than 50 nm. Scaling the NWs below 20 nm leads to the formation of homogenous InGaAs NWs which exhibit phase-coherent, quasi-1D quantum transport as shown by magnetoconductance measurements. These results are an important advance towards scalable topological quantum computing.

arXiv comment20 pages, 3 figures

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Cited by in corpus (20)

• Field effect enhancement in buffered quantum nanowire networks
• Recent advances in hole-spin qubits
• Selective-area chemical beam epitaxy of in-plane InAs one-dimensional channels grown on InP(001), InP(111)B, and InP(110) surfaces
• Self-controlled growth of highly uniform Ge/Si hut wires for scalable qubit devices
• In-plane selective area InSb-Al nanowire quantum networks
• Quantum Computing: An Overview Across the System Stack
• Selective area epitaxy of PbTe-Pb hybrid nanowires on a lattice-matched substrate
• Observation of nonlocal Josephson effect on double InAs nanowires
• Regaining a spatial dimension: Mechanically transferrable two-dimensional InAs nanofins grown by selective area epitaxy
• Ballistic PbTe Nanowire Devices
• Modeling the Ga/As binary system across temperaturesand compositions from first principles
• Selective Area Superconductor Epitaxy to Ballistic Semiconductor Nanowires
• Selective Area Growth Rates of III-V Nanowires
• Cryogenic Multiplexing with Bottom-Up Nanowires
• Full characterization and modelling of graded interfaces in a high lattice-mismatch axial nanowire heterostructure
• Boosting Transparency in Topological Josephson Junctions via Stencil Lithography
• Post-growth shaping and transport anisotropy in 2D InAs nanofins
• Low-symmetry nanowire cross-sections for enhanced Dresselhaus spin-orbit interaction
• Schottky-like barrier characterization of field-effect transistors with multiple quasi-ballistic channels
• Statistical Reproducibility of Selective Area Grown InAs Nanowire Devices