Unusual anisotropy of inplane field magnetoresistance in ultra-high mobility SiGe/Si/SiGe quantum wells
arXiv:1706.06919 · doi:10.1063/1.4991545
Abstract
We find an unusual anisotropy of the inplane field magnetoresistance in ultra-high mobility SiGe/Si/SiGe quantum wells. The anisotropy depends on the orientation between the inplane field, , and current, , relative to the crystallographic axes of the sample and is a consequence of the intrinsic ridges on the quantum well surface. For the simplest orientations between current and crystallographic axes, a method of recalculating the magnetoresistance measured at into the one measured at is suggested and is shown to yield results that agree with the experiment.
As published
References in corpus (4)
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- Ultra-high mobility two-dimensional electron gas in a SiGe/Si/SiGe quantum well
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Cited by in corpus (10)
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- Spin effect on the low-temperature resistivity maximum in a strongly interacting 2D electron system
- Triple-top-gate technique for studying the strongly interacting 2D electron systems in heterostructures
- Stabilization of a two-dimensional quantum electron solid in perpendicular magnetic fields
- Band Flattening and Landau Level Merging in Strongly-Correlated Two-Dimensional Electron Systems
- Inequivalence of the low-density insulating state and quantum Hall insulating states in a strongly correlated two-dimensional electron system
- Quantum Wigner solid in two-dimensional electron systems in semiconductors
- Spin and valley effects on the quantum phase transition in two dimensions