paper

Unusual anisotropy of inplane field magnetoresistance in ultra-high mobility SiGe/Si/SiGe quantum wells

arXiv:1706.06919 · doi:10.1063/1.4991545

Abstract

We find an unusual anisotropy of the inplane field magnetoresistance in ultra-high mobility SiGe/Si/SiGe quantum wells. The anisotropy depends on the orientation between the inplane field, , and current, , relative to the crystallographic axes of the sample and is a consequence of the intrinsic ridges on the quantum well surface. For the simplest orientations between current and crystallographic axes, a method of recalculating the magnetoresistance measured at into the one measured at is suggested and is shown to yield results that agree with the experiment.

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