Probing Electron Spin Resonance in Monolayer Graphene

Abstract

The precise value of the $g$-factor in graphene is of fundamental interest for all spin-related properties and their application. We investigate monolayer graphene on a Si/SiO2 substrate by resistively detected electron spin resonance (ESR). Surprisingly, the magnetic moment and corresponding g-factor of 1.952+/-0.002 is insensitive to charge carrier type, concentration, and mobility.

arXiv comment5 pages, 3 figures

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• Particle-hole symmetry protects spin-valley blockade in graphene quantum dots
• Hofstadter butterfly and the quantum Hall effect in twisted double bilayer graphenes
• Electrical spin manipulation in graphene nanostructures
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• Progress in superconductor-semiconductor topological Josephson junctions
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• Reduction of g-factor due to Rashba effect in graphene
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