Performance Enhancement of Black Phosphorus Field-Effect Transistors by Chemical Doping
arXiv:1607.05760 · doi:10.1109/LED.2016.2535905
Abstract
In this letter, a new approach to chemically dope black phosphorus (BP) is presented, which significantly enhances the device performance of BP field-effect transistors for an initial period of 18 h, before degrading to previously reported levels. By applying 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ), low ON-state resistance of 3.2 ohm.mm and high field-effect mobility of 229 cm2/Vs are achieved with a record high drain current of 532 mA/mm at a moderate channel length of 1.5 μm.
Published in IEEE Electron Device Letters, VOL. 37, NO. 4, APRIL 2016
References in corpus (13)
- Two-Dimensional Material Nanophotonics
- Fast and broadband photoresponse of few-layer black phosphorus field-effect transistors
- Semiconducting Black Phosphorus: Synthesis, Transport Properties and Electronic Applications
- Effective Passivation of Exfoliated Black Phosphorus Transistors against Ambient Degradation
- Black Phosphorus-Monolayer MoS2 van der Waals Heterojunction P-N Diode
- Waveguide-integrated black phosphorus photodetector with high responsivity and low dark current
- High quality sandwiched black phosphorus heterostructure and its quantum oscillations
- Device Perspective for Black Phosphorus Field-Effect Transistors: Contact Resistance, Ambipolar and Scaling
- Toward Air-Stable Multilayer Phosphorene Thin-Films and Transistors
- Black Phosphorus Radio-Frequency Transistors
- Gate Tunable Quantum Oscillations in Air-Stable and High Mobility Few-Layer Phosphorene Heterostructures
- Performance limits projection of black phosphorous field-effect transistors
- Temporal and Thermal Stability of Al2O3-passivated Phosphorene MOSFETs