Toward the intrinsic limit of topological insulator Bi2Se3

Jixia Dai; Damien West; Xueyun Wang; Yazong Wang; Daniel Kwok; S-W. Cheong; S. B. Zhang; Weida Wu

doi:10.1103/PhysRevLett.117.106401

paper

Toward the intrinsic limit of topological insulator Bi2Se3

arXiv:1606.05318 · doi:10.1103/PhysRevLett.117.106401

Abstract

Combining high resolution scanning tunneling microscopy and first principle calculations, we identified the major native defects, in particular the Se vacancies and Se interstitial defects that are responsible for the bulk conduction and nanoscale potential fluctuation in single crystals of archetypal topological insulator Bi2Se3. Here it is established that the defect concentrations in Bi2Se3 are far above the thermodynamic limit, and that the growth kinetics dominate the observed defect concentrations. Furthermore, through careful control of the synthesis, our tunneling spectroscopy suggests that our best samples are approaching the intrinsic limit with the Fermi level inside the band gap without introducing extrinsic dopants.

arXiv comment9 pages, 4 figures

References in corpus (26)

Topological Insulators
Topological insulators and superconductors
Topological Insulators in Three Dimensions
Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator
Discovery (theoretical prediction and experimental observation) of a large-gap topological-insulator class with spin-polarized single-Dirac-cone on the surface
First observation of Spin-Momentum Helical Locking in Bi2Se3 and Bi2Te3, demonstration of Topological-Order at 300K and a realization of topological-transport-regime
Topological Insulator Materials
Superconductivity in CuxBi2Se3 and its implications for pairing in the undoped topological insulator
High-precision realization of robust quantum anomalous Hall state in a hard ferromagnetic topological insulator
Large bulk resistivity and surface quantum oscillations in the topological insulator Bi2Te2Se
Three-Dimensional Topological Insulators
p-type Bi2Se3 for topological insulator and low temperature thermoelectric applications
Band structure engineering in (Bi1-xSbx)2Te3 ternary topological insulators
Bulk Fermi surface coexistence with Dirac surface state in Bi $_{2}$ Se $_{3}$ : a comparison of photoemission and Shubnikov-de Haas measurements
Strong surface scattering in ultrahigh mobility Bi2Se3 topological insulator crystals
Landau Quantization of Massless Dirac Fermions in Topological Insulator
Surface conduction of topological Dirac electrons in bulk insulating Bi2Se3
Spatial Fluctuations of Helical Dirac Fermions on the Surface of Topological Insulators
Fermi Level Tuning of Epitaxial Sb2Te3 Thin Films on Graphene by Regulating Intrinsic Defects and Substrate Transfer Doping
Realization of a vertical topological p-n junction in epitaxial $S b_{2} T e_{3} /B i_{2} T e_{3}$ heterostructures
Intrinsic conduction through topological surface states of insulating Bi $_{2}$ Te $_{3}$ epitaxial thin films
Scanning Tunneling Microscopy of Defect States in the Semiconductor Bi $_{2}$ Se $_{3}$
STM imaging of impurity resonances on Bi $_{2}$ Se $_{3}$
Experimental realization of a topological p-n junction by intrinsic defect-grading
Protective capping of topological surface states of intrinsically insulating Bi $_{2}$ Te $_{3}$
Effect of surface defects and few-atomic steps on the local density of states of the atomically-clean surface of topological insulator Bi $_{2}$ Se $_{3}$

Cited by in corpus (29)

Crystal growth and magnetic structure of MnBi2Te4
Transport in two-dimensional topological materials: recent developments in experiment and theory
Native Defects in Antiferromagnetic Topological Insulator MnBi $_{2}$ Te $_{4}$
Temperature driven phase transition at the antimonene/Bi2Se3 van der Waals heterostructure
Surface vibrational modes of the topological insulator Bi $_{2}$ Se $_{3}$ observed by Raman spectroscopy
Chiral Spin Mode on the Surface of a Topological Insulator
Disorder enabled band structure engineering of a topological insulator surface
Observation of Chiral Surface Excitons in a Topological Insulator Bi $_{2}$ Se $_{3}$
Realizing gapped surface states in magnetic topological insulator MnBi $_{2 - x}$ Sb $_{x}$ Te $_{4}$
Solution to the hole-doping problem and tunable quantum Hall effect in Bi $_{2}$ Se $_{3}$ thin films
Revealing Optical Transitions and Carrier Recombination Dynamics within the Bulk Band Structure of Bi2Se3
Local manifestations of thickness dependent topology and axion edge state in topological magnet MnBi $_{2}$ Te $_{4}$
Electronic properties of Bi $_{2}$ Se $_{3}$ dopped by $3 d$ transition metal (Mn, Fe, Co, or Ni) ions
Defect Role in the Carrier Tunable Topological Insulator (Bi $_{1 - x}$ Sb $_{x}$ ) $_{2}$ Te $_{3}$ Thin Films
Time-, spin-, and angle-resolved photoemission spectroscopy with a 1-MHz 10.7-eV pulse laser
Experimental search for one-dimensional edge states at surface steps of the topological insulator Bi $_{2}$ Se $_{3}$ : Distinguishing between effects and artifacts
Preparation of clean surfaces and Se vacancy formation in Bi $_{2}$ Se $_{3}$ by ion bombardment and annealing
Magnetic properties of Mn-doped Bi $_{2}$ Se $_{3}$ topological insulators: ab initio calculations
The Vertical Position of Sr Dopants in the Sr $_{x}$ Bi $_{2}$ Se $_{3}$ Superconductor
Electronic and Vibrational Excitations on the Surface of the Three-Dimensional Topological Insulator Bi $_{2}$ Te $_{3 - x}$ Se $_{x}$ (x = 0, 2, 3)
Spontaneous ferromagnetism and finite surface energy gap in the topological insulator Bi $_{2}$ Se $_{3}$ from surface Bi$_\rm{Se}$ antisite defects
Exploring Native Atomic Defects in NiTe2
Characterizing the chemical potential disorder in the topological insulator (Bi $_{1 - x}$ Sb $_{x}$ ) $_{2}$ Te $_{3}$ thin films
Pb-doped p-type Bi $_{2}$ Se $_{3}$ thin films via interfacial engineering
Strong and Weak Three-Dimensional Topological Insulators Probed by Surface Science Methods
Energy gap in tunneling spectroscopy: effect of the chemical potential shift
Non-linear hybrid surface-defect states in defective Bi $_{2}$ Se $_{3}$
Anomalous 140 K electronic transition in Bi $_{2}$ Se $_{3}$ : Possible charge order in a defect-engineered system
Procedures for assessing the stability of proposed topological materials