Ferroelectric Domain Patterning Controlled Schottky Junction State in Monolayer MoS${}_2$

Abstract

We exploit scanning probe controlled domain patterning in a ferroelectric top layer to induce nonvolatile modulation of the conduction characteristic of monolayer MoS${}_2$ between a transistor and a junction state. In the presence of a domain wall, MoS${}_2$ exhibits rectified I-V that is well described by the thermionic emission model. The induced Schottky barrier height varies from 0.38 eV to 0.57 eV and is tunabe by a SiO${}_2$ global back-gate, while the tuning range of depends sensitively on the conduction band tail trapping states. Our work points to a new route to achieving programmable functionalities in van der Waals materials and sheds light on the critical performance limiting factors in these hybrid systems.

arXiv comment18 pages, 4 figures

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Cited by in corpus (9)

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• Polar Coupling Enabled Nonlinear Optical Filtering at MoS${}_2$/Ferroelectric Heterointerfaces
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• Giant Transport Anisotropy in ReS${}_2$ Revealed via Nanoscale Conducting Path Control
• Electrically Induced, Non-Volatile, Metal Insulator Transition in a Ferroelectric Gated MoS${}_2$ Transistor
• Transport Anisotropy in One-dimensional Graphene Superlattice in the High Kronig-Penney Potential Limit
• Domain Wall Enabled Steep Slope Switching in MoS${}_2$ Transistors Towards Hysteresis-Free Operation
• Nanoscale ferroelectric programming of van der Waals heterostructures
• Graphene separation and stretching induced by piezoelectric effect of ferroelectric domains: impact on the conductance of graphene channel