Plasma-enhanced chemical vapor deposition of amorphous Si on graphene
arXiv:1605.05099 · doi:10.1063/1.4948978
Abstract
Plasma-enhanced chemical vapor deposition of thin a-Si:H layers on transferred large area graphene is investigated. Radio frequency (RF, 13.56 MHz) and very high frequency (VHF, 140 MHz) plasma processes are compared. Both methods provide conformal coating of graphene with Si layers as thin as 20 nm without any additional seed layer. The RF plasma process results in amorphization of the graphene layer. In contrast, the VHF process keeps the high crystalline quality of the graphene layer almost intact. Correlation analysis of Raman 2D and G band positions indicates that Si deposition induces reduction of the initial doping in graphene and an increase of compressive strain. Upon rapid thermal annealing the amorphous Si layer undergoes dehydrogenation and transformation into a polycrystalline film whereby a high crystalline quality of graphene is preserved.
arXiv comment9 pages, 6 figures
References in corpus (12)
- Detection of Individual Gas Molecules Absorbed on Graphene
- Quantifying defects in graphene via Raman spectroscopy at different excitation energies
- Electrochemically Top Gated Graphene: Monitoring Dopants by Raman Scattering
- Uniaxial Strain in Graphene by Raman Spectroscopy: G peak splitting, Gruneisen Parameters and Sample Orientation
- Optical Separation of Mechanical Strain from Charge Doping in Graphene
- Realization of a High Mobility Dual-gated Graphene Field Effect Transistor with Al2O3 Dielectric
- Defect scattering in graphene
- Graphene Schottky diodes: an experimental review of the rectifying graphene/semiconductor heterojunction
- Residual Metallic Contamination of Transferred Chemical Vapor Deposited Graphene
- Going Ballistic: Graphene Hot Electron Transistors
- Nucleation and growth of HfO layers on graphene by CVD
- Deposition of thin silicon layers on transferred large area CVD graphene