Probing Out-of-Plane Charge Transport in Black Phosphorus with Graphene-Contacted Vertical Field-Effect Transistors

Abstract

Black phosphorus (BP) has recently emerged as a promising narrow band gap layered semiconductor with optoelectronic properties that bridge the gap between semi-metallic graphene and wide band gap transition metal dichalcogenides such as MoS2. To date, BP field-effect transistors have utilized a lateral geometry with in-plane transport dominating device characteristics. In contrast, we present here a vertical field-effect transistor geometry based on a graphene/BP van der Waals heterostructure. The resulting device characteristics include high on-state current densities (> 1600 A/cm2) and current on/off ratios exceeding 800 at low temperature. Two distinct charge transport mechanisms are identified, which are dominant for different regimes of temperature and gate voltage. In particular, the Schottky barrier between graphene and BP determines charge transport at high temperatures and positive gate voltages, whereas tunneling dominates at low temperatures and negative gate voltages. These results elucidate out-of-plane electronic transport in BP, and thus have implications for the design and operation of BP-based van der Waals heterostructures.

arXiv comment4 figures and supporting information, Published in Nano Letters (2016)

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Cited by in corpus (5)

• Van der Waals heterostructures for high-performance device applications: challenges and opportunities
• Current-temperature scaling for a Schottky interface with non-parabolic energy dispersion
• Highly anisotropic spin transport in ultrathin black phosphorus
• Twisted monolayer and bilayer graphene for vertical tunneling transistors
• Visible Out-of-plane Polarized Luminescence and Electronic Resonance from Black Phosphorus