Electric dipole spin resonance in systems with a valley dependent g-factor

Abstract

In this theoretical study we qualitatively and quantitatively investigate the electric dipole spin resonance (EDSR) in a single Si/SiGe quantum dot in the presence of a magnetic field gradient, e.g., produced by a ferromagnet. We model a situation in which the control of electron spin states is achieved by applying an oscillatory electric field, inducing real-space oscillations of the electron inside the quantum dot. One of the goals of our study is to present a microscopic theory of valley dependent $g$-factors in Si/SiGe quantum dots and investigate how valley relaxation combined with a valley dependent $g$-factor leads to a novel electron spin dephasing mechanism. Furthermore, we discuss the interplay of spin and valley relaxations in Si/SiGe quantum dots. Our findings suggest that the electron spin dephases due to valley relaxation, and are in agreement with recent experimental studies [Nature Nanotechnology 9, 666-670 (2014)].

arXiv comment9 pages, 9 figures

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Cited by in corpus (12)

• Electrically driven electron spin resonance mediated by spin-valley-orbit coupling in a silicon quantum dot
• Three-electron spin qubits
• Electron g-factor of valley states in realistic silicon quantum dots
• Electric-field control and noise protection of the flopping-mode spin qubit
• A natural heavy-hole flopping mode qubit in germanium
• An electrically driven spin qubit based on valley mixing
• High-fidelity geometric gate for silicon-based spin qubits
• A quadrupolar exchange-only spin qubit
• Dressed photon-orbital states in a quantum dot: Inter-valley spin resonance
• Spin manipulation and spin dephasing in quantum dot integrated with a slanting magnetic field
• Fast spin-valley-based quantum gates in Si with micromagnets
• Universal singlet-triplet qubits implemented near the transverse sweet spot