Disorder induced Dirac-point physics in epitaxial graphene from temperature-dependent magneto-transport measurements

Abstract

We report a study of disorder effects on epitaxial graphene in the vicinity of the Dirac point by magneto-transport. Hall effect measurements show that the carrier density increases quadratically with temperature, in good agreement with theoretical predictions which take into account intrinsic thermal excitation combined with electron-hole puddles induced by charged impurities. We deduce disorder strengths in the range 10.2 $\sim$ 31.2 meV, depending on the sample treatment. We investigate the scattering mechanisms and estimate the impurity density to be $3.0\sim 9.1\times 10^{10}$ cm${}^{-2}$ for our samples. An asymmetry in the electron/hole scattering is observed and is consistent with theoretical calculations for graphene on SiC substrates. We also show that the minimum conductivity increases with increasing disorder potential, in good agreement with quantum-mechanical numerical calculations.

arXiv comment6 pages, 3 figures

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• Operation of graphene quantum Hall resistance standard in a cryogen-free table-top system
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• Strongly temperature dependent resistance of meander-patterned graphene
• Observation of Coulomb blockade in nanostructured epitaxial bilayer graphene on SiC