Revisiting the measurement of the spin relaxation time in graphene-based devices

Abstract

A long spin relaxation time (tausf) is the key for the applications of graphene to spintronics but the experimental values of tausf have been generally much shorter than expected. We show that the usual determination by the Hanle method underestimates tausf if proper account of the spin absorption by contacts is lacking. By revisiting series of experimental results, we find that the corrected tausf are longer and less dispersed, which leads to a more unified picture of tausf derived from experiments. We also discuss how the correction depends on the parameters of the graphene and contacts.

References in corpus (9)

• Graphene Spintronics
• Tunneling Spin Injection into Single Layer Graphene (Supplementary Information)
• Tunneling Spin Injection into Single Layer Graphene
• Non-collinear Magnetoelectronics
• Controlling spin relaxation in hexagonal BN-encapsulated graphene with a transverse electric field
• Contact induced spin relaxation in Hanle spin precession measurements
• Enhancement of spin relaxation time in hydrogenated graphene spin valve devices
• Effect of contacts on spin lifetime measurements in graphene
• Suppression of contact-induced spin dephasing in graphene/MgO/Co spin-valve devices by successive oxygen treatments

Cited by in corpus (4)

• Nanosecond spin relaxation times in single layer graphene spin valves with hexagonal boron nitride tunnel barriers
• Spin Hall Effect in Bilayer Graphene Combined with an Insulator up to Room Temperature
• Spin transport in two-layer-CVD-hBN/graphene/hBN heterostructures
• Grounded Graphene-Based Nano-Waveguide with Chiral Cover and Substrate: New Theoretical Investigation