Modulation of electronic and mechanical properties of phosphorene through strain

Abstract

We report a first-principles study on the elastic, vibrational, and electronic properties of recently synthesized phosphorene. By calculating Grüneisen parameters, we evaluate the frequency shift of Raman/infrared active modes via symmetric biaxial strain. We also study an inducing semiconductor-metal transition, the gap size, and effective mass of carriers in various strain configurations. Furthermore, we unfold the emergence of a peculiar Dirac-shaped dispersion for specific strain conditions, including the zigzag-oriented tensile strain. The observed linear energy spectrum has distinct velocities corresponding to each of its linear branches and is limited to the $\Gamma -X$ direction in the first Brillouin zone.

8 pages, 5 figures

References in corpus (14)

• Electric Field Effect in Atomically Thin Carbon Films
• Fast and broadband photoresponse of few-layer black phosphorus field-effect transistors
• Strain-Engineering Anisotropic Electrical Conductance of Phosphorene and Few-Layer Black Phosphorus
• Black Phosphorus-Monolayer MoS2 van der Waals Heterojunction P-N Diode
• Semiconducting layered blue phosphorus: A computational study
• Superior mechanical flexibility of phosphorene and few-layer black phosphorus
• Strain engineered direct-indirect band gap transition and its mechanism in 2D phosphorene
• Tunable optical properties of multilayers black phosphorus thin films
• Plasma-assisted fabrication of monolayer phosphorene and its Raman characterization
• Hinge-like structure induced unusual properties of black phosphorus and new strategies to improve the thermoelectric performance
• Electrons and holes in phosphorene
• Lattice Vibrational Modes and Raman Scattering Spectra of Strained Phosphorene
• Mechanical properties of freely suspended semiconducting graphene-like layers based on MoS2
• Engineering Schottky Barrier in Black Phosphorus field effect devices for spintronic applications

Cited by in corpus (18)

• Strain Engineering for Phosphorene: The Potential Application as a Photocatalyst
• Infrared fingerprints of few-layer black phosphorus
• Ab initio study of electron-phonon interaction in phosphorene
• Auxetic Nanomaterials: Recent Progress and Future Development
• Resolving and Tuning Mechanical Anisotropy in Black Phosphorus via Nanomechanical Multimode Resonance Spectromicroscopy
• An Analytic Study of Strain Engineering the Electronic Bandgap in Single-Layer Black Phosphorus
• Thermoelectric transport in monolayer phosphorene
• Exciton binding energies and luminescence of phosphorene under pressure
• Silicon diphosphide (SiP2) and silicon diarsenide (SiAs2): Novel stable 2D semiconductors with high carrier mobilities, promising for water splitting photocatalysts
• The electronic origin of shear-induced direct to indirect gap transition and anisotropy diminution in phosphorene
• Mechanical Properties of Phosphorene Nanotubes: A Density Functional Tight-Binding Study
• Unconventional Strain-Dependent Conductance Oscillations in Pristine Phosphorene
• Mechanical Properties and Failure Behavior of Phosphorene with Grain Boundaries
• Giant magnetoresistance and anomalous transport in phosphorene-based multilayers with noncollinear magnetization
• Proximity induced Colossal Conductivity Modulation in Phosphorene
• Strain-induced Weyl and Dirac states and direct-indirect gap transitions in group-V materials
• Edge magnetic properties of black phosphorene nanoribbons
• 2D Black Phosphorus Carbide: Rippling and Formation of Nanotubes