High performance bilayer-graphene Terahertz detectors

Abstract

We report bilayer-graphene field effect transistors operating as THz broadband photodetectors based on plasma-waves excitation. By employing wide-gate geometries or buried gate configurations, we achieve a responsivity $\sim 1.2V/W(1.3mA/W)$ and a noise equivalent power $\sim 2\times 10^{-9}W/H{z}^{-1/2}$ in the 0.29-0.38 THz range, in photovoltage and photocurrent mode. The potential of this technology for scalability to higher frequencies and the development of flexible devices makes our approach competitive for a future generation of THz detection systems.

arXiv comment8 pages, 5 figures. Submitted to Applied Physics Letters

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