Graphene Nanoribbon Field-Effect Transistors on Wafer-Scale Epitaxial Graphene on SiC substrates
arXiv:1310.6823 · doi:10.1063/1.4905155
Abstract
We report the realization of top-gated graphene nanoribbon field effect transistors (GNRFETs) of ~10 nm width on large-area epitaxial graphene exhibiting the opening of a band gap of ~0.14 eV. Contrary to prior observations of disordered transport and severe edge-roughness effects of GNRs, the experimental results presented here clearly show that the transport mechanism in carefully fabricated GNRFETs is conventional band-transport at room temperature, and inter-band tunneling at low temperature. The entire space of temperature, size, and geometry dependent transport properties and electrostatics of the GNRFETs are explained by a conventional thermionic emission and tunneling current model. Our combined experimental and modeling work proves that carefully fabricated narrow GNRs behave as conventional semiconductors, and remain potential candidates for electronic switching devices.
References in corpus (25)
- Electric Field Effect in Atomically Thin Carbon Films
- Quantum Spin Hall Insulator State in HgTe Quantum Wells
- Energy Band Gap Engineering of Graphene Nanoribbons
- Energy Gaps in Graphene Nanoribbons
- Field-effect tunneling transistor based on vertical graphene heterostructures
- Electronic and Magnetic Properties of Nanographite Ribbons
- Spin qubits in graphene quantum dots
- Facile Synthesis of High Quality Graphene Nanoribbons
- Resonant tunnelling and negative differential conductance in graphene transistors
- Electron Transport in Disordered Graphene Nanoribbons
- Etching and Narrowing of Graphene from the Edges
- Mobility and Saturation Velocity in Graphene on SiO2
- Directed self-organization of graphene nanoribbons on SiC
- Energy gaps in etched graphene nanoribbons
- Spatially resolved spectroscopy of monolayer graphene on SiO2
- Graphene Nanoribbons with Smooth Edges Behave as Quantum Wires
- Quantum dot behavior in graphene nanoconstrictions
- Disorder-induced gap behavior in graphene nanoribbons
- Correlating Raman Spectral Signatures with Carrier Mobility in Epitaxial Graphene: A Guide to Achieving High Mobility on the Wafer Scale
- Single-Particle Tunneling in Doped Graphene-Insulator-Graphene Junctions
- Transport gap in side-gated graphene constrictions
- An essential mechanism of heat dissipation in carbon nanotube electronics
- SymFET: A Proposed Symmetric Graphene Tunneling Field Effect Transistor
- Transport in Nanoribbon Interconnects Obtained from Graphene Grown by Chemical Vapor Deposition
- Transport Properties of Graphene Nanoribbon Transistors on Transport Properties of Graphene Nanoribbon Transistors on Chemical-Vapor-Deposition Grown Wafer-Scale Graphene
Cited by in corpus (5)
- Oriented Graphene Nanoribbons Embedded in Hexagonal Boron Nitride Trenches
- Ultrasensitive Field-Effect Biosensors Enabled by the Unique Electronic Properties of Graphene
- Graphene-enabled, directed nanomaterial placement from solution for large-scale device integration
- Bottom-up fabrication of atomically precise graphene nanoribbons
- Excitons in planar quantum wells based on transition metal dichalcogenides