Strain-induced band gaps in bilayer graphene

Abstract

We present a tight-binding investigation of strained bilayer graphene within linear elasticity theory, focusing on the different environments experienced by the A and B carbon atoms of the different sublattices. We find that the inequivalence of the A and B atoms is enhanced by the application of perpendicular strain ${\epsilon }_{zz}$, which provides a physical mechanism for opening a band gap, most effectively obtained when pulling the two graphene layers apart. In addition, perpendicular strain introduces electron-hole asymmetry and can result in linear electronic dispersion near the K-point. When applying lateral strain to one layer and keeping the other layer fixed, we find the opening of an indirect band gap for small deformations. Our findings suggest experimental means for strain-engineered band gaps in bilayer graphene.

References in corpus (14)

• Electric Field Effect in Atomically Thin Carbon Films
• The electronic properties of graphene
• Two Dimensional Atomic Crystals
• Biased bilayer graphene: semiconductor with a gap tunable by electric field effect
• A tight-binding approach to uniaxial strain in graphene
• Andreev reflection and Klein tunneling in graphene
• Asymmetry gap in the electronic band structure of bilayer graphene
• Electronic states and Landau levels in graphene stacks
• Transport in Bilayer Graphene: Calculations within a self-consistent Born approximation
• Controlling Energy Gap of Bilayer Graphene by Strain
• Strained bilayer graphene: Band structure topology and Landau level spectrum
• Phonon and structural changes in deformed Bernal stacked bilayer graphene
• Strain and field modulation in bilayer graphene band structure
• Landau levels in deformed bilayer graphene at low magnetic fields

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• Bilayer graphene in periodic and quasiperiodic magnetic superlattices
• Pseudo-magnetoexcitons in strained graphene bilayers without external magnetic fields
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