Estimation of the spin polarization for Heusler-compound thin films by means of nonlocal spin-valve measurements: Comparison of Co${}_2$FeSi and Fe${}_3$Si

Abstract

We study room-temperature generation and detection of pure spin currents using lateral spin-valve devices with Heusler-compound electrodes, Co${}_2$FeSi (CFS) or Fe${}_3$Si (FS). The magnitude of the nonlocal spin-valve (NLSV) signals is seriously affected by the dispersion of the resistivity peculiarly observed in the low-temperature grown Heusler compounds with ordered structures. From the analysis based on the one-dimensional spin diffusion model, we find that the spin polarization monotonically increases with decreasing the resistivity, which depends on the structural ordering, for both CFS and FS electrodes, and verify that CFS has relatively large spin polarization compared with FS.

5 pages, 4 figures, accepted for publication in Phys. Rev. B (Rapid communication)

References in corpus (5)

• Half-metallic ferromagnets: From band structure to many-body effects
• Electrical Detection of Spin Transport in Lateral Ferromagnet-Semiconductor Devices
• Substituting the main group element in cobalt - iron based Heusler alloys: Co${}_2$FeAl${}_{1-x}$Si${}_x$
• Epitaxial film growth and magnetic properties of Co_2FeSi
• Epitaxial ferromagnetic Fe${}_3$Si/Si(111) structures with high-quality hetero-interfaces

Cited by in corpus (11)

• Large enhancement in the generation efficiency of pure spin currents in Ge using Heusler-compound Co_2FeSi electrodes
• Symmetry Conserving Maximally Projected Wannier Functions
• Anomalous Hall effect and current spin polarization in Co${}_2$FeX (X = Al, Ga, In, Si, Ge, and Sn) Heusler compounds: A systematic {\it ab initio} study
• Giant enhancement of spin pumping efficiency using Fe3Si ferromagnet
• Spin Currents injected electrically and thermally from highly spin polarized Co${}_2$MnSi
• Spin injection from a half-metal at finite temperatures
• Room-temperature detection of spin accumulation in silicon across Schottky tunnel barriers using a MOSFET structure
• Direct Evidence for Suppression of the Kondo Effect due to Pure Spin Current
• Spin injection into multilayer graphene from highly spin-polarized Co2FeSi Heusler alloy
• Effect of Co-Fe substitutions on the room-temperature spin polarization in Co_3-xFe_xSi Heusler-compound films
• Formation of Mn-rich interfacial phases in Co2FexMn1-xSi thin films