Electrical spin injection and accumulation in CoFe/MgO/Ge contacts at room temperature

Abstract

We first report the all-electrical spin injection and detection in CoFe/MgO/moderately doped n-Ge contact at room temperature (RT), employing threeterminal Hanle measurements. A sizable spin signal of ~170 kΩ μm^2 has been observed at RT, and the analysis using a single-step tunneling model gives a spin lifetime of ~120 ps and a spin diffusion length of ~683 nm in Ge. The observed spin signal shows asymmetric bias and temperature dependences which are strongly related to the asymmetry of the tunneling process.

28 pages, 5 figures

References in corpus (6)

• Electrical Detection of Spin Transport in Lateral Ferromagnet-Semiconductor Devices
• Electronic measurement and control of spin transport in Silicon
• Electrical Detection of Spin Accumulation at a Ferromagnet-Semiconductor Interface
• Comment: "Electrical injection and detection of spin accumulation in silicon at 500 K with magnetic metal / silicon dioxide contacts" [Nature Commun. 2:245 doi:10.1038/ncomms125 (2011)]
• Electron spin relaxation in bulk III-V semiconductors from a fully microscopic kinetic spin Bloch equation approach
• Lateral Spin Injection in Germanium Nanowires

Cited by in corpus (22)

• Optical spin injection and spin lifetime in Ge heterostructures
• An experimental demonstration of room-temperature spin transport in n-type Germanium epilayers
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• Crossover from spin accumulation into interface states to spin injection in the germanium conduction band
• Large enhancement in the generation efficiency of pure spin currents in Ge using Heusler-compound Co_2FeSi electrodes
• Intrinsic Spin Lifetime of Conduction Electrons in Germanium
• Injection and detection of spin in a semiconductor by tunneling via interface states
• Large spin accumulation voltages in epitaxial Mn5Ge3 contacts on Ge without oxide tunnel barrier
• Electrical injection and detection of spin accumulation in Ge at room temperature
• Room-temperature spin transport in n-Ge probed by four-terminal nonlocal measurements
• Spin Accumulation in Nondegenerate and Heavily Doped p-Type Germanium
• Electrical and thermal spin accumulation in germanium
• Giant enhancement of spin detection sensitivity in (Ga,Mn)As/GaAs Esaki diodes
• Hanle-effect measurements of spin injection from Mn5Ge3C0.8/Al2O3-contacts into degenerately doped Ge channels on Si
• Non-local opto-electrical spin injection and detection in germanium at room temperature
• Electrical Investigation of the Oblique Hanle Effect in Ferromagnet/Oxide/Semiconductor Contacts
• Spin-dependent phenomena in semiconductors in strong electric fields
• Effect of spin relaxation rate on the interfacial spin depolarization in ferromagnet/oxide/semiconductor contacts
• Non-linear spin transport in a rectifying ferromagnet/semiconductor Schottky contact
• Hot-electron effect in spin relaxation of electrically injected electrons in intrinsic Germanium
• Effect of the magnetic domain structure in the ferromagnetic contact on spin accumulation in silicon
• Lateral Mn5Ge3 spin-valve in contact with a high-mobility Ge two-dimensional hole gas