Quantitative Analysis of the Disorder Broadening and the Intrinsic Gap for the $\nu =5/2$ Fractional Quantum Hall State

Abstract

We report a reliable method to estimate the disorder broadening parameter from the scaling of the gaps of the even and major odd denominator fractional quantum Hall states of the second Landau level. We apply this technique to several samples of vastly different densities and grown in different MBE chambers. Excellent agreement is found between the estimated intrinsic and numerically obtained energy gaps for the $\nu =5/2$ fractional quantum Hall state. Futhermore, we quantify, for the first time, the dependence of the intrinsic gap at $\nu =5/2$ on Landau level mixing.

PRB 84, R121305 (2011)

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Cited by in corpus (32)

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• Modified MBE hardware and techniques and role of gallium purity for attainment of two dimensional electron gas mobility >35 x10^6 cm^2/Vs in AlGaAs/GaAs quantum wells grown by MBE
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• Fractional Quantum Hall Effect at Landau Level Filling nu=4/11
• Evidence for the Collective Nature of the Reentrant Integer Quantum Hall States of the Second Landau Level
• Evidence for a $\nu =5/2$ Fractional Quantum Hall Nematic State in Parallel Magnetic Fields
• Observation of Incompressibility at $\nu =4/11$ and $\nu =5/13$
• $nu=5/2$ Fractional Quantum Hall State in Low-Mobility Electron Systems: Different Roles of Disorder
• Striped quantum Hall state in a half-filled Landau level
• Mobility versus quality in 2D semiconductor structures
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• Competing Abelian and non-Abelian topological orders in $\nu =1/3+1/3$ quantum Hall bilayers
• Mobility and quantum mobility of modern GaAs/AlGaAs heterostructures
• Quantum Lifetime in Ultra-High Quality GaAs Quantum Wells: Relationship to ${\Delta }_{5/2}$ and Impact of Density Fluctuations
• Electron-Electron Interactions and the Paired-to-Nematic Quantum Phase Transition in the Second Landau Level
• Increasing the ν = 5 / 2 gap energy: an analysis of MBE growth parameters
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• Observation of an anomalous density-dependent energy gap of the $\nu =5/2$ fractional quantum Hall state in the low density regime
• Finite Temperature Behavior in the Second Landau Level of the Two-dimensional Electron Gas
• The Pfaffian state in an electron gas with small Landau level gaps
• Landau Levels of Topologically-Protected Surface States Probed by Dual-Gated Quantum Capacitance
• Fractional Quantum Hall States in a Ge Quantum Well
• Growth and electrical characterization of Al0.24Ga0.76As/AlxGa1-xAs/Al0.24Ga0.76As modulation-doped quantum wells with extremely low x
• Competition of Pairing and Nematicity in the Two-Dimensional Electron Gas
• Fractional quantum Hall effect at the filling factor $\nu =5/2$
• High temperature resistivity measured at ν = 5/2 as a predictor of 2DEG quality in the N=1 Landau level
• Disorder broadening of even denominator fractional quantum Hall states in the presence of a short-range alloy potential
• In-plane electric fields and the $\nu =\frac{5}{2}$ fractional quantum Hall effect in a disk geometry
• Morphing of 2D Hole Systems at $\nu =3/2$ in Parallel Magnetic Fields: Compressible, Stripe, and Fractional Quantum Hall Phases
• Finite-thickness effect and spin polarization of the even-denominator fractional quantum Hall states
• Non-Abelian $\nu =1/2$ quantum Hall state in ${\Gamma }_8$ Valence Band Hole Liquid