Fractional Quantum Hall Effect at Landau Level Filling nu=4/11

Abstract

We report low temperature electronic transport results on the fractional quantum Hall effect of composite fermions at Landau level filling nu = 4/11 in a very high mobility and low density sample. Measurements were carried out at temperatures down to 15mK, where an activated magnetoresistance Rxx and a quantized Hall resistance Rxy, within 1% of the expected value of h/(4/11)e^2, were observed. The temperature dependence of the Rxx minimum at 4/11 yields an activation energy gap of ~ 7 mK. Developing Hall plateaus were also observed at the neighboring states at nu = 3/8 and 5/13.

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• Numerical demonstration of Abelian fractional statistics of composite fermions in the spherical geometry
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• Evidence for Topological Protection Derived from Six-Flux Composite Fermions
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• Topological Protection in a Landau Flat Band at $\nu =7/11$, a Candidate Filling Factor for Unconventional Correlations
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