Complementary-like Graphene Logic Gates Controlled by Electrostatic Doping

Abstract

Realization of logic circuits from graphene is very attractive for high-speed nanoelectronics. However, the intrinsic ambipolar nature hinders the formation of graphene logic devices with the conventional complementary architecture. Using electrostatic doping modulation, we show here a facile method to control the charge neutrality points and form a complementary-like structure, in which the ambipolar conduction is used as a benefit rather than a drawback to construct logic devices. A band gap is also introduced in the channels to improve the switching ratio of the graphene transistors. For the first time, complementary-like NOR and NAND logic gates were demonstrated. This method provides a possible route for logic circuits from ambipolar graphene and, in principle, can be also extended to other ambipolar semiconductors, such as organic compounds and carbon nanotube thin films.

16 pages, 7 figures

References in corpus (9)

• Electric Field Effect in Atomically Thin Carbon Films
• Biased bilayer graphene: semiconductor with a gap tunable by electric field effect
• Fluorographene: Two Dimensional Counterpart of Teflon
• Asymmetry gap in the electronic band structure of bilayer graphene
• Temperature dependent transport in suspended graphene
• Realization of a High Mobility Dual-gated Graphene Field Effect Transistor with Al2O3 Dielectric
• Ab Initio Theory of Gate Induced Gaps in Graphene Bilayers
• Integrated complementary graphene inverter
• Enhanced Logic Performance with Semiconducting Bilayer Graphene Channels