Electrical detection of free induction decay and Hahn echoes in phosphorus doped silicon

Abstract

Paramagnetic centers in a solid-state environment usually give rise to inhomogenously broadened electron paramagnetic resonance (EPR) lines, making conventionally detected free induction decay (FID) signals disappear within the spectrometer dead time. Here, experimental results of an electrically detected FID of phosphorus donors in silicon epilayers with natural isotope composition are presented, showing Ramsey fringes within the first 150 ns. An analytical model is developed to account for the data obtained as well as for the results of analogous two-pulse echo experiments. The results of a numerical calculation are further presented to assess the capability of the method to study spin-spin interactions.

9 pages, 9 figures

References in corpus (7)

• Approaching Unit Visibility for Control of a Superconducting Qubit with Dispersive Readout
• Electrical detection of 31P spin quantum states
• Electrically-detected magnetic resonance in ion-implanted Si:P nanostructures
• Electrical detection of spin echoes for phosphorus donors in silicon
• Long spin coherence in silicon with an electrical spin trap readout
• Spin-Dependent Scattering off Neutral Antimony Donors in 28-Si Field-Effect Transistors
• Spin-dependent scattering in a silicon transistor

Cited by in corpus (13)

• Silicon Quantum Electronics
• Electrical control of a long-lived spin qubit in a Si/SiGe quantum dot
• Low-frequency spin qubit detuning noise in highly purified ${}^{28}$Si/SiGe
• Nanoscale broadband transmission lines for spin qubit control
• Nuclear Spin Dynamics of Ionized Phosphorus Donors in Silicon
• Time Constants of Spin-Dependent Recombination Processes
• Coherent electrical rotations of valley states in Si quantum dots using the phase of the valley-orbit coupling
• Hyperfine Clock Transitions of Bismuth Donors in Silicon Detected by Spin Dependent Recombination
• Electrically Detected Double Electron-Electron Resonance: Exchange Interaction of 31P Donors and Pb0 Defects at the Si/SiO2 Interface
• Pulsed Low-Field Electrically Detected Magnetic Resonance
• Broadband Electrically Detected Magnetic Resonance Using Adiabatic Pulses
• Spin-dependent recombination at arsenic donors in ion-implanted silicon
• Spin relaxation dynamics of radical-pair processes at low magnetic fields