Three-terminal field effect devices utilizing thin film vanadium oxide as the channel layer

Abstract

Electrostatic control of the metal-insulator transition (MIT) in an oxide semiconductor could potentially impact the emerging field of oxide electronics. Vanadium dioxide is of particular interest due to the fact that the MIT happens in the vicinity of room temperature and it is considered to exhibit the Mott transition. We present a detailed account of our experimental investigation into three-terminal field effect transistor-like devices using thin film VO2 as the channel layer. The gate is separated from the channel through an insulating gate oxide layer, enabling true probing of the field effect with minimal or no interference from large leakage currents flowing directly from the electrode. The influence of the fabrication of multiple components of the device, including the gate oxide deposition, on the VO2 film characteristics is discussed. Further, we discuss the effect of the gate voltage on the device response, point out some of the unusual characteristics including temporal dependence. A reversible unipolar modulation of the channel resistance upon the gate voltage is demonstrated for the first time in optimally engineered devices. The results presented in this work are of relevance towards interpreting gate voltage response in such oxides as well as addressing challenges in advancing gate stack processing for oxide semiconductors.

References in corpus (8)

• Evidence for a Structurally-driven Insulator-to-metal Transition in VO2: a View from the Ultrafast Timescale
• Observation of Mott Transition in VO_2 Based Transistors
• Monoclinic and Correlated Metal Phase in VO_2 as Evidence of the Mott Transition: Coherent Phonon Analysis
• Colossal electroresistance and electronic phase separation in mixed-valent manganites
• Observation of First-Order Metal-Insulator Transition without Structural Phase Transition in VO_2
• Hall carrier density and magnetoresistance measurements in thin film vanadium dioxide across the metal-insulator transition
• Abrupt metal-insulator transition observed in VO2 thin films induced by a switching voltage pulse
• Electrostatic modification of infrared response in gated structures based on VO2

Cited by in corpus (13)

• Strongly Correlated Materials
• Coupled magnetic-ferroelectric metal-insulator transitions in epitaxially-strained SrCoO${}_3$ from first principles
• Field-effect modulation of conductance in VO2 nanobeam transistors with HfO2 as the gate dielectric
• Mott metal-insulator transitions in pressurized layered trichalcogenides
• Transport behavior and electronic structure of phase pure VO2 thin films grown on c-plane sapphire under different O2 partial pressure
• Metal-insulator transition induced in SrTi_{1-x}V_xO_3 thin films
• Field-effect diode based on electron-induced Mott transition in NdNiO3
• Dynamic Control of Nonequilibrium Metal-Insulator Transitions
• Kinetically Decoupled Electrical and Structural Phase Transitions in VO2
• Structural and metal-insulator transitions in ionic liquid-gated Ca3Ru2O7 surface
• Charge gain via solid-state gating of an oxide Mott system
• Multi-probe detection of domain nucleation across the metal-insulator transition in VO${}_2$
• Correlative Ultrafast Imaging of a Propagating Photo-Driven Phase Transition Using 4D STEM