Structural and metal-insulator transitions in ionic liquid-gated Ca3Ru2O7 surface

Abstract

We report the fabrication and measurements of ionic liquid gated Hall bar devices prepared on thin Ca${}_3$Ru${}_2$O${}_7$ flakes exfoliated from bulk single crystals that were grown by a floating zone method. Two types of devices with their electrical transport properties dominated by $c$-axis transport in Type A or that of the in-plane in Type B devices, were prepared. Bulk physical phenomena, including a magnetic transition near 56 K, a structural and metal-insulator transition at a slightly lower temperature, as well as the emergence of a highly unusual metallic state as the temperature is further lowered, were found in both types of devices. However, the Shubnikov-de Haas oscillations were found in Type A but not Type B devices, most likely due to enhanced disorder on the flake surface. Finally, the ionic liquid gating of a Type B device revealed a shift in critical temperature of the structural and metal-insulator transitions, suggesting that such transitions can be tuned by the electric field effect.

5 pages, 4 figures

References in corpus (5)

• Two Dimensional Atomic Crystals
• Three-terminal field effect devices utilizing thin film vanadium oxide as the channel layer
• Spin-valve effect and magnetoresistivity in single crystalline Ca3Ru2O7
• Capacitance of the Double Layer Formed at the Metal/Ionic-Conductor Interface: How Large Can It Be?
• Field-induced Orbital Patterns in Ferromagnetic Layered Ruthenates

Cited by in corpus (1)

• Existence of electron and hole pockets and partial gap opening in the correlated semimetal Ca3Ru2O7