Observation of First-Order Metal-Insulator Transition without Structural Phase Transition in VO_2

Abstract

An abrupt first-order metal-insulator transition (MIT) without structural phase transition is first observed by current-voltage measurements and micro-Raman scattering experiments, when a DC electric field is applied to a Mott insulator VO_2 based two-terminal device. An abrupt current jump is measured at a critical electric field. The Raman-shift frequency and the bandwidth of the most predominant Raman-active A_g mode, excited by the electric field, do not change through the abrupt MIT, while, they, excited by temperature, pronouncedly soften and damp (structural MIT), respectively. This structural MIT is found to occur secondarily.

4 pages, 4 figures

References in corpus (3)

• Evidence for a Structurally-driven Insulator-to-metal Transition in VO2: a View from the Ultrafast Timescale
• Observation of Mott Transition in VO_2 Based Transistors
• Universality and Critical Behavior at the Mott transition

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• Observation of a uniform temperature dependence in the electrical resistance across the structural phase transition in thin film vanadium oxide ($V{O}_2$)
• Coupled nonpolar-polar metal-insulator transition in 1:1 SrCrO${}_3$/SrTiO${}_3$ superlattices: A first-principles study
• Multi-Fields Modulation of Physical Properties of Oxide Thin Films