Observation of a uniform temperature dependence in the electrical resistance across the structural phase transition in thin film vanadium oxide ($VO_{2}$)

R. G. Mani; S. Ramanathan

doi:10.1063/1.2767189

paper

Observation of a uniform temperature dependence in the electrical resistance across the structural phase transition in thin film vanadium oxide ( $V O_{2}$ )

arXiv:0707.0885 · doi:10.1063/1.2767189

Abstract

An electrical study of thin $V O_{2}$ films in the vicinity of the structural phase transition at $6 8^{0} C$ shows (a) that the electrical resistance $R$ follows $l o g (R)$ $\propto$ $- T$ over the $T$ -range, $20 < T < 8 0^{0} C$ covering both sides of the structural transition, and (b) a history dependent hysteresis loop in $R$ upon thermal cycling. These features are attributed here to transport through a granular network.

3 pages, 3 color figures

References in corpus (1)

Evidence for a Structurally-driven Insulator-to-metal Transition in VO2: a View from the Ultrafast Timescale

Observation of a uniform temperature dependence in the electrical resistance across the structural phase transition in thin film vanadium oxide (VO2​)

Abstract

References in corpus (1)

Observation of a uniform temperature dependence in the electrical resistance across the structural phase transition in thin film vanadium oxide ( $V O_{2}$ )