Abrupt metal-insulator transition observed in VO2 thin films induced by a switching voltage pulse
arXiv:cond-mat/0502375 · doi:10.1016/j.physb.2005.07.032
Abstract
An abrupt metal-insulator transition (MIT) was observed in VO2 thin films during the application of a switching voltage pulse to two-terminal devices. Any switching pulse over a threshold voltage for the MIT of 7.1 V enabled the device material to transform efficiently from an insulator to a metal. The characteristics of the transformation were analyzed by considering both the delay time and rise time of the measured current response. The extrapolated switching time of the MIT decreased down to 9 ns as the external load resistance decreased to zero. Observation of the intrinsic switching time of the MIT in the correlated oxide films is impossible because of the inhomogeneity of the material; both the metallic state and an insulating state co-exist in the measurement volume. This indicates that the intrinsic switching time is in the order of less than a nanosecond. The high switching speed might arise from a strong correlation effect (Coulomb repulsion) between the electrons in the material.
arXiv comment5 pages, 5 figures
References in corpus (2)
Cited by in corpus (10)
- Memory Metamaterials
- Temperature dependence of Mott transition in VO_2 and programmable critical temperature sensor
- Three-terminal field effect devices utilizing thin film vanadium oxide as the channel layer
- Electrical switching dynamics and broadband microwave characteristics of VO2 RF devices
- Isothermal current-driven insulator-to-metal transition in VO through strong correlation effect
- Electrical switching and oscillations in vanadium dioxide
- Negative Differential Resistance in Carbon-Based Nanostructures
- Separating electric field and thermal effects across the metal-insulator transition in vanadium oxide nanobeams
- High-speed sensing of RF signals with phase change materials
- Temporal dynamics of all-optical switching in hybrid VO2/Si waveguides