470 citations · 864 across the 8 of their papers we have counts for
8 papers
Highly oriented VO2 thin films prepared by sol-gel deposition method
Byung-Gyu Chae, Hyun-Tak Kim, Sun-Jin Yun +4
Highly oriented VO2 thin films were grown on sapphire substrates by the sol-gel method that includes a low pressure annealing in an oxygen atmosphere. This reduction process effect…
Abrupt metal-insulator transition observed in VO2 thin films induced by a switching voltage pulse
Byung-Gyu Chae, Hyun-Tak Kim, Doo-Hyeb Youn +1
An abrupt metal-insulator transition (MIT) was observed in VO2 thin films during the application of a switching voltage pulse to two-terminal devices. Any switching pulse over a th…
Observation of abrupt first-order metal-insulator transition in GaAs-based two-terminal device
Hyun-Tak Kim, Doo-Hyeb Youn, Byung-Gyu Chae +2
An abrupt first-order metal-insulator transition (MIT) as a jump of the density of states is observed for Be doped GaAs, which is known as a semiconductor, by inducing very low hol…
Observation of First-Order Metal-Insulator Transition without Structural Phase Transition in VO_2
Yong-Sik Lim, Hyun-Tak Kim, B. G. Chae +5
An abrupt first-order metal-insulator transition (MIT) without structural phase transition is first observed by current-voltage measurements and micro-Raman scattering experiments,…
Temperature dependence and control of the Mott transition in VO_2 based devices
Hyun-Tak Kim, B. G. Chae, D. H. Youn +2
The transition voltage of an abrupt metal-insulator transition (MIT), observed by applying an electric field to two-terminal devices fabricated on a Mott insulator VO_2 film, decre…
Fabrication and Electrical Properties of Pure VO2 Phase Films
B. G. Chae, D. H. Youn, H. T. Kim +2
We have grown VO2 thin films by laser ablation for electronic device applications. In obtaining the thin films of the pure VO2 phase, oxygen partial pressure is a critical paramete…