11 citations · 11 across the 4 of their papers we have counts for
5 papers · 1 filter
Abrupt metal-insulator transition observed in VO2 thin films induced by a switching voltage pulse
Byung-Gyu Chae, Hyun-Tak Kim, Doo-Hyeb Youn +1
An abrupt metal-insulator transition (MIT) was observed in VO2 thin films during the application of a switching voltage pulse to two-terminal devices. Any switching pulse over a th…
Observation of abrupt first-order metal-insulator transition in GaAs-based two-terminal device
Hyun-Tak Kim, Doo-Hyeb Youn, Byung-Gyu Chae +2
An abrupt first-order metal-insulator transition (MIT) as a jump of the density of states is observed for Be doped GaAs, which is known as a semiconductor, by inducing very low hol…
Temperature dependence and control of the Mott transition in VO_2 based devices
Hyun-Tak Kim, B. G. Chae, D. H. Youn +2
The transition voltage of an abrupt metal-insulator transition (MIT), observed by applying an electric field to two-terminal devices fabricated on a Mott insulator VO_2 film, decre…
Observation of Mott Transition in VO_2 Based Transistors
Hyun-Tak Kim, B. G. Chae, D. H. Youn +2
An abrupt Mott metal-insulator transition (MIT) rather than the continuous Hubbard MIT near a critical on-site Coulomb energy U/U_c=1 is observed for the first time in VO_2, a stro…
Gate-Induced Mott Transition
Hyun-Tak Kim, B. G. Chae, D. H. Youn +2
For a strongly correlated material, VO2, near a critical on-site Coulomb energy U/Uc=1, the abrupt Mott metal-insulator transition (MIT) rather than the continuous Hubbard MIT is o…