3 papers
cond-mat.str-el2004
Observation of abrupt first-order metal-insulator transition in GaAs-based two-terminal device
Hyun-Tak Kim, Doo-Hyeb Youn, Byung-Gyu Chae +2
An abrupt first-order metal-insulator transition (MIT) as a jump of the density of states is observed for Be doped GaAs, which is known as a semiconductor, by inducing very low hol…
cond-mat.str-el2003
Temperature dependence and control of the Mott transition in VO_2 based devices
Hyun-Tak Kim, B. G. Chae, D. H. Youn +2
The transition voltage of an abrupt metal-insulator transition (MIT), observed by applying an electric field to two-terminal devices fabricated on a Mott insulator VO_2 film, decre…
cond-mat.str-el2003
Gate-Induced Mott Transition
Hyun-Tak Kim, B. G. Chae, D. H. Youn +2
For a strongly correlated material, VO2, near a critical on-site Coulomb energy U/Uc=1, the abrupt Mott metal-insulator transition (MIT) rather than the continuous Hubbard MIT is o…