activity
20002008
most citedObservation of Mott Transition in VO_2 Based Transistors

470 citations · 966 across the 13 of their papers we have counts for

collaborators

13 papers

cond-mat.supr-con2008★ 3 cited

Comments on gap anisotropy and nodal constant Fermi velocity in a superconductor, BSCCO

Hyun-tak Kim, Bong-jun Kim, Kwang-yong Kang

On the basis of both the inhomogeneity of a superconductor, BSCCO-2212, and the effect of measurement, we reveal that an anomalously large gap anisotropy known as evidence of dx2-y…

cond-mat.str-el2006★ 334 cited

Monoclinic and Correlated Metal Phase in VO_2 as Evidence of the Mott Transition: Coherent Phonon Analysis

Hyun-Tak Kim, Yong-Wook Lee, Bong-Jun Kim +6

In femtosecond pump-probe measurements, the appearance of coherent phonon oscillations at 4.5 THz and 6.0 THz indicating the rutile metal phase of VO_2 does not occur simultaneousl…

cond-mat.str-el2006★ 21 cited

Hole-driven MIT theory, Mott transition in VO_2, MoBRiK

Hyun-Tak Kim, Bong-Jun Kim, Yong Wook Lee +3

For inhomogeneous high-T_c superconductors, hole-driven metal-insulator transition (MIT) theory explains that the gradual increase of conductivity with increasing hole doping is du…

cond-mat.str-el2006

Mott transition observed by micro-Raman scattering in VO_2

Hyun-Tak Kim, Byung-Gyu Chae, Bong-Jun Kim +3

A strongly correlated Mott first-order metal-insulator transition (MIT) (or Jump) not accompanied by the structural phase transition (SPT) was clearly revealed in VO_2, (New J. Phy…

cond-mat.mtrl-sci2005★ 2 cited

Highly oriented VO2 thin films prepared by sol-gel deposition method

Byung-Gyu Chae, Hyun-Tak Kim, Sun-Jin Yun +4

Highly oriented VO2 thin films were grown on sapphire substrates by the sol-gel method that includes a low pressure annealing in an oxygen atmosphere. This reduction process effect…

cond-mat.str-el2005★ 132 cited

Abrupt metal-insulator transition observed in VO2 thin films induced by a switching voltage pulse

Byung-Gyu Chae, Hyun-Tak Kim, Doo-Hyeb Youn +1

An abrupt metal-insulator transition (MIT) was observed in VO2 thin films during the application of a switching voltage pulse to two-terminal devices. Any switching pulse over a th…