Kinetically Decoupled Electrical and Structural Phase Transitions in VO2

Abstract

Vanadium dioxide (VO2) has drawn significant attention for its near room temperature insulator to metal transition and associated structural phase transition. The underlying Physics behind the temperature induced insulator to metal and concomitant structural phase transition in VO2 is yet to be fully understood. We have investigated the kinetics of the above phase transition behaviors of VO2 with the help of resistivity measurements and Raman spectroscopy. Resistance thermal hysteresis scaling and relaxation measurements across the temperature induced insulator to metal transition reveal the unusual behaviour of this first-order phase transition, whereas Raman relaxation measurements show that the temperature induced structural phase transition in VO2 follows usual behaviour and is consistent with mean field prediction. At higher temperature sweeping rates decoupling of insulator to metal transition and structural phase transition have been confirmed. The observed anomalous first order phase transition behavior in VO2 is attributed to the unconventional quasi particle dynamics, i.e. significantly lowered electronic thermal conductivity across insulator to metal transition, which is confirmed by ultrafast optical pump-probe time domain thermoreflectance measurements.

arXiv comment25 pages, 8 figures

References in corpus (16)

• Mott transition in VO2 revealed by infrared spectroscopy and nano-imaging
• A `checkerboard' electronic crystal state in lightly hole-doped Ca_{2-x}Na_{x}CuO_{2}Cl_{2}
• Local Ordering in the Pseudogap State of the High-T${}_c$ Superconductor Bi${}_2$Sr${}_2$CaCu${}_2$O${}_{8+\delta }$
• Observation of Mott Transition in VO_2 Based Transistors
• Instantaneous band gap collapse in photoexcited monoclinic VO${}_2$ due to photocarrier doping
• Microwave imaging of mesoscopic percolating network in a manganite thin film
• Driving rate dependence of avalanche statistics and shapes at the yielding transition
• Three-terminal field effect devices utilizing thin film vanadium oxide as the channel layer
• Novel dynamical effects and persistent memory in phase separated manganites
• Direct Observation of Decoupled Structural and Electronic Transitions and an Ambient Pressure Monoclinic-Like Metallic Phase of VO${}_2$
• Driving rate effects in avalanche-mediated, first-order phase transitions
• Low temperature study of field induced antiferro-ferromagnetic transition in Pd doped FeRh
• Role of the V-V dimerization in insulator-metal transition and optical transmittance of pure and doped VO2 thin films
• History dependent nucleation and growth of the martensitic phase in a magnetic shape memory alloy Ni${}_{45}$Co${}_5$Mn${}_{38}$Sn${}_{12}$
• Kinetic Spinodal Instabilities in the Mott Transition in V2O3: Evidence from Hysteresis Scaling and Dissipative Phase Ordering
• Highly repeatable nanoscale phase coexistence in vanadium dioxide films

Cited by in corpus (1)

• VO${}_2$ under hydrostatic pressure: Isostructural phase transition close to a critical end-point