Highly repeatable nanoscale phase coexistence in vanadium dioxide films

Abstract

The metal-insulator transition (MIT) in vanadium dioxide (VO2) has the potential to lead to a number of disruptive technologies, including ultra-fast data storage, optical switches, and transistors which move beyond the limitations of silicon. For applications, VO2 films are deposited on crystalline substrates to prevent cracking observed in bulk VO2 crystals across the thermally driven MIT. Near the MIT, VO2 films exhibit nanoscale coexistence between metallic and insulating phases, which opens up further potential applications such as memristors, tunable capacitors, and optically engineered devices such as perfect absorbers. It is generally believed that the formation of phase domains must be affected to some extent by random processes which lead to unreliable performance in nanoscale MIT based devices. Here we show that nanoscale randomness is suppressed in the thermally driven MIT in sputtered VO2 films; the observed domain patterns of metallic and insulating phases in the vicinity of the MIT in these films behave in a strikingly reproducible way. This result opens the door for realizing reliable nanoscale VO2 devices.

References in corpus (14)

• Mott transition in VO2 revealed by infrared spectroscopy and nano-imaging
• Electrodynamics of Correlated Electron Materials
• A `checkerboard' electronic crystal state in lightly hole-doped Ca_{2-x}Na_{x}CuO_{2}Cl_{2}
• Strain engineering and one-dimensional organization of metal-insulator domains in single-crystal VO2 beams
• Local Ordering in the Pseudogap State of the High-T${}_c$ Superconductor Bi${}_2$Sr${}_2$CaCu${}_2$O${}_{8+\delta }$
• Measurement of a solid-state triple point at the metal-insulator transition in VO2
• Phase-transition driven memristive system
• Metal-insulator transition in vanadium dioxide nanobeams: probing sub-domain properties of strongly correlated materials
• Microwave imaging of mesoscopic percolating network in a manganite thin film
• Infrared spectroscopy and nano-imaging of the insulator-to-metal transition in vanadium dioxide
• Signature of persistent metallic domains in FORC measurements of the VO${}_2$ metal-insulator transition
• Random Field Driven Spatial Complexity at the Mott Transition in VO2
• Physical properties of V${}_{1-x}$Ti${}_x$O${}_2$ (0 $<$ x $<$ 0.187) single crystals
• Mesoscopic, Non-equilibrium Fluctuations of Inhomogeneous Electronic States in Manganites

Cited by in corpus (4)

• Universal phase dynamics in VO2 switches revealed by ultrafast operando diffraction
• Molecular Quantum Materials: Electronic Phases and Charge Dynamics in Two-Dimensional Organic Solids
• Phase coexistence at the first-order Mott-transition revealed by pressure-dependent dielectric spectroscopy of $\kappa$-(BEDT-TTF)${}_2$Cu${}_2$(CN)${}_3$
• Kinetically Decoupled Electrical and Structural Phase Transitions in VO2