Random Field Driven Spatial Complexity at the Mott Transition in VO2

Abstract

We report the first application of critical cluster techniques to the Mott metal-insulator transition in vanadium dioxide. We show that the geometric properties of the metallic and insulating puddles observed by scanning near-field infrared microscopy are consistent with the system passing near criticality of the random field Ising model as temperature is varied. The resulting large barriers to equilibrium may be the source of the unusually robust hysteresis phenomena associated with the metal-insulator transition in this system.

6 pages, 5 figures, 1 supplementary information

References in corpus (9)

• Mott transition in VO2 revealed by infrared spectroscopy and nano-imaging
• An Intrinsic Bond-Centered Electronic Glass with Unidirectional Domains in Underdoped Cuprates
• Unconventional critical behaviour in a quasi-two-dimensional organic conductor
• Local Temperature Redistribution and Structural Transition During Joule-Heating-Driven Conductance Switching in VO2
• Infrared spectroscopy and nano-imaging of the insulator-to-metal transition in vanadium dioxide
• Multiple Avalanches Across the Metal-Insulator Transition of Vanadium Oxide Nano-scaled Junctions
• Universality of liquid-gas Mott transitions at finite temperatures
• Unexpected universality in static and dynamic avalanches
• Avalanche Spatial Structure and Multivariable Scaling Functions; Sizes, Heights, Widths, and Views through Windows

Cited by in corpus (18)

• Random-field Ising and $O(N)$ models: Theoretical description through the functional renormalization group
• Critical Slowing Down at the Abrupt Mott Transition: When the First-Order Phase Transition Becomes Zeroth-Order and Looks Like Second-Order
• Kinetic Spinodal Instabilities in the Mott Transition in V2O3: Evidence from Hysteresis Scaling and Dissipative Phase Ordering
• Quantitative characterization of short-range orthorhombic fluctuations in FeSe through pair distribution function analysis
• Experimental Realization of the 1D Random Field Ising Model
• Highly repeatable nanoscale phase coexistence in vanadium dioxide films
• From hidden metal-insulator transition to Planckian-like dissipation by tuning disorder in a nickelate
• The two-dimensional disordered Mott metal-insulator transition
• Strange Metals from Melting Correlated Insulators in Twisted Bilayer Graphene
• Widespread orthorhombic fluctuations in the (Sr,Na)Fe${}_2$As${}_2$ family of superconductors
• Classifying surface probe images in strongly correlated electronic systems via machine learning
• Imaging antiferromagnetic domain fluctuations and the effect of atomic-scale disorder in a doped spin-orbit Mott insulator
• Deep Learning Hamiltonians from Disordered Image Data in Quantum Materials
• Probing the evolution of electronic phase-coexistence in complex systems by terahertz radiation
• Cell dynamics simulations of coupled charge and magnetic phase transformation in correlated oxides
• Artifact Free Transient Near-Field Nanoscopy
• Kinetics of thermal Mott transitions in the Hubbard model
• Connecting Complex Electronic Pattern Formation to Critical Exponents