Electrostatic modification of infrared response in gated structures based on VO2

Abstract

We investigate the changes in the infrared response due to charge carriers introduced by electrostatic doping of the correlated insulator vanadium dioxide (VO2) integrated in the architecture of the field effect transistor. Accumulation of holes at the VO2 interface with the gate dielectric leads to an increase in infrared absorption. This phenomenon is observed only in the insulator-to-metal transition regime of VO2 with coexisting metallic and insulating regions. We postulate that doped holes lead to the growth of the metallic islands thereby promoting percolation, an effect that persists upon removal of the applied gate voltage.

14 pages, including 4 figures

References in corpus (10)

• Mott transition in VO2 revealed by infrared spectroscopy and nano-imaging
• Infrared spectroscopy of Landau levels in graphene
• Observation of Mott Transition in VO_2 Based Transistors
• Field Effect Transistors on Rubrene Single Crystals with Parylene Gate Insulator
• Monoclinic and Correlated Metal Phase in VO_2 as Evidence of the Mott Transition: Coherent Phonon Analysis
• Temperature dependence of Mott transition in VO_2 and programmable critical temperature sensor
• Correlated metallic state of vanadium dioxide
• Infrared Imaging of the Nanometer-Thick Accumulation Layer in Organic Field-Effect Transistors
• Electric field effect modulation of transition temperature, mobile carrier density and in-plane penetration depth in NdBa2Cu3O(7-delta) thin films
• Optical probe of electrostatic doping in an n-type Mott insulator

Cited by in corpus (12)

• Memory Metamaterials
• Electrodynamics of Correlated Electron Materials
• Phase-transition driven memristive system
• Infrared spectroscopy and nano-imaging of the insulator-to-metal transition in vanadium dioxide
• Three-terminal field effect devices utilizing thin film vanadium oxide as the channel layer
• Nanoscale imaging of the electronic and structural transitions in vanadium dioxide
• Signature of persistent metallic domains in FORC measurements of the VO${}_2$ metal-insulator transition
• Current oscillations in Vanadium Dioxide: evidence for electrically triggered percolation avalanches
• Field-effect modulation of conductance in VO2 nanobeam transistors with HfO2 as the gate dielectric
• Tunable Casimir equilibria with phase change materials: from quantum trapping to its release
• Nanoscale Thermal Imaging of VO${}_2$ via Poole-Frenkel Conduction
• Infrared conductivity of hole accumulation and depletion layers in (Ga,Mn)As- and (Ga,Be)As-based electric field-effect devices