Infrared Imaging of the Nanometer-Thick Accumulation Layer in Organic Field-Effect Transistors

Abstract

We report on infrared (IR) spectro-microscopy of the electronic excitations in nanometer-thick accumulation layers in FET devices based on poly(3-hexylthiophene). IR data allows us to explore the charge injection landscape and uncovers the critical role of the gate insulator in defining relevant length scales. This work demonstrates the unique potential of IR spectroscopy for the investigation of physical phenomena at the nanoscale occurring at the semiconductor-insulator interface in FET devices.

15 pages, 4 figures

References in corpus (2)

• Temperature-dependent contact resistances in high-quality polymer field-effect transistors
• Hole interactions with molecular vibrations on DNA

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• Electronic Excitations and Insulator-Metal Transition in Poly(3-hexylthiophene) Organic Field-Effect Transistors