Temperature-dependent contact resistances in high-quality polymer field-effect transistors

Abstract

Contact resistances between organic semiconductors and metals can dominate the transport properties of electronic devices incorporating such materials. We report measurements of the parasitic contact resistance and the true channel resistance in bottom contact poly(3-hexylthiophene) (P3HT) field-effect transistors with channel lengths from 400 nm up to 40 $\mu$m, from room temperature down to 77 K. For fixed gate voltage, the ratio of contact to channel resistance decreases with decreasing temperature. We compare this result with a recent model for metal-organic semiconductor contacts. Mobilities corrected for this contact resistance can approach 1 cm${}^2$/Vs at room temperature and high gate voltages.

10 pages, 4 figures, accepted to Appl. Phys. Lett

Cited by in corpus (12)

• Strongly Correlated Materials
• Controlling charge injection in organic field-effect transistors using self-assembled monolayers
• Nanotransfer Printing of Organic and Carbon Nanotube Thin-Film Transistors on Plastic Substrates
• Nonlinear charge injection in organic field-effect transistors
• Reproducible Low Contact Resistance in Rubrene Single-Crystal Field-Effect Transistors with Nickel Source and Drain Electrodes
• Doping dependent charge injection and band alignment in organic field-effect transistors
• Infrared Imaging of the Nanometer-Thick Accumulation Layer in Organic Field-Effect Transistors
• Extracting contact effects in organic field-effect transistors
• Transport in organic semiconductors in large electric fields: From thermal activation to field emission
• Improvement of the poly-3-hexylthiophene transistor performance using small molecule contact functionalization
• Nanostructure Investigations of Nonlinear Differential Conductance in NdNiO${}_3$ Thin Films
• Interfacial charge transfer in nanoscale polymer transistors