Electro-optic measurement of carrier mobility in an organic thin-film transistor
arXiv:1004.5391 · doi:10.1063/1.3460526
Abstract
We have used an electro-optic technique to measure the position-dependent infrared absorption of holes injected into a thin crystal of the organic semiconductor, 6,13-bis(triisopropylsilylethynyl)-pentacene incorporated in a field-effect transistor. By applying square-wave voltages of variable frequency to the gate or drain, one can measure the time it takes for charges to accumulate on the surface, and therefore determine their mobility.
11 pages, 4 figures, to be published in Applied Physics Letters