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researcher

Gokul Gopalakrishnan

2 papers hereh-index 8555 citations32 works total

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • middle author2

Across the 2 of 2 papers where every author was matched, so the position is known.

fields
  • cond-mat.mes-hall1
  • cond-mat.mtrl-sci1

identity via Semantic Scholar / OpenAlex

most citedThree-terminal field effect devices utilizing thin film vanadium oxide as the channel layer

160 citations · 163 across the 2 of their papers we have counts for

collaborators

2 papers

cond-mat.mes-hall2020★ 3 cited

Three-dimensional phonon population anisotropy in silicon nanomembranes

Kyle M. McElhinny, Gokul Gopalakrishnan, Martin V. Holt +2

Nanoscale single-crystals possess modified phonon dispersions due to the truncation of the crystal. The introduction of surfaces alters the population of phonons relative to the bu…

cond-mat.mtrl-sci2010★ 160 cited

Three-terminal field effect devices utilizing thin film vanadium oxide as the channel layer

Dmitry Ruzmetov, Gokul Gopalakrishnan, Changhyun Ko +2

Electrostatic control of the metal-insulator transition (MIT) in an oxide semiconductor could potentially impact the emerging field of oxide electronics. Vanadium dioxide is of par…

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Not affiliated with arXiv. Researcher data from Semantic Scholar (ODC-BY) and OpenAlex.