Contact resistance and shot noise in graphene transistors
arXiv:0810.4568 · doi:10.1103/PhysRevB.79.075428
Abstract
Potential steps naturally develop in graphene near metallic contacts. We investigate the influence of these steps on the transport in graphene Field Effect Transistors. We give simple expressions to estimate the voltage-dependent contribution of the contacts to the total resistance and noise in the diffusive and ballistic regimes.
6 pages, 4 figures; Figs 3 and 4 completed and appendix added
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Cited by in corpus (10)
- Thermoelectric and Magnetothermoelectric Transport Measurements of Graphene
- Snake Trajectories in Ultraclean Graphene p-n Junctions
- Quantum behavior of graphene transistors near the scaling limit
- Spin and valley transports in junctions of Dirac fermions
- Efficient quantum transport simulation for bulk graphene heterojunctions
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