129 citations
Counting papers with at most 25 authors, so collaboration author lists do not stand in for the people here.
- Paul Drude Institute for Solid State ElectronicsDE128 papers
- Leibniz Institute for Crystal GrowthDE14 papers
- Weierstrass Institute for Applied Analysis and StochasticsDE13 papers
- Centre National de la Recherche ScientifiqueFR9 papers
- RWTH Aachen UniversityDE8 papers
- Freie Universität BerlinDE6 papers
- Humboldt-Universität zu BerlinDE6 papers
- National Institute for Materials ScienceJP6 papers
- Universidad Autónoma de MadridES6 papers
- Weizmann Institute of ScienceIL6 papers
- Cornell UniversityUS5 papers
- Institute of Computational Mathematics and Mathematical GeophysicsRU5 papers
66 papers · 1 filter
Dependence of the Mn sticking coefficient on Ga-rich, N-rich, and Ga/N-flux-free conditions in GaN grown by plasma-assisted molecular beam epitaxy
YongJin Cho, Changkai Yu, Huili Grace Xing +1
This brief report examines the influence of Ga/N flux conditions on Mn incorporation in GaN. Mn-doped GaN layers were grown at 680C by molecular beam epitaxy on a Ga-pola…
Molecular Beam Epitaxy of AlScN Nanowires: Towards Group-III Nitride Piezoelectric Nanogenerators with Enhanced Response
Adriano Notarangelo, Rudeesun Songmuang, Mostafa Saleh +10
We study the molecular beam epitaxy of self-assembled AlScN nanowires on conductive TiN layers and demonstrate their application in piezoelectric na…
Defect-Mediated Phase Engineering of 2D Ag at the Graphene/SiC Interface
Arpit Jain, Boyang Zheng, Sawani Datta +23
Atomically thin silver (Ag) films offer unique opportunities in plasmonic, quantum optics, and energy harvesting, yet conventional growth methods struggle to achieve structural con…
Unravelling the oxygen influence in cubic bixbyite InO on Raman active phonon modes by isotope studies
Johannes Feldl, Roland Gillen, Janina Maultzsch +5
In this study, we performed comprehensive investigations on the Raman active phonon modes in cubic bixbyite InO, an important oxide based, wide-bandgap semiconductor. Funda…
Above-room-temperature ferromagnetism in large-area epitaxial Fe3GaTe2/graphene van der Waals heterostructures
Tauqir Shinwari, Kacho Imtiyaz Ali Khan, Hua Lv +10
Fe3GaTe2 (FGaT), a two-dimensional (2D) layered ferromagnetic metal, exhibits a high Curie temperature (TC) ~ 360 K along with strong perpendicular magnetic anisotropy (PMA), makin…
Two-dimensional Indium Oxide at the Epitaxial Graphene/SiC Interface: Synthesis, Structure, Properties, and Devices
Furkan Turker, Bohan Xu, Chengye Dong +15
High-quality two-dimensional (2D) dielectrics are crucial for fabricating 2D/3D hybrid vertical electronic devices such as metal-oxide-semiconductor (MOS) based Schottky diodes and…
Roadmap on Quantum Magnetic Materials
Antonija Grubišić-Čabo, Marcos H. D. Guimarães, Dmytro Afanasiev +36
Fundamental research on two-dimensional (2D) magnetic systems based on van der Waals materials has been gaining traction rapidly since their recent discovery. With the increase of…
Kinetics, thermodynamics, and catalysis of the cation incorporation into GeO2, SnO2, and (SnxGe1-x)O2 during suboxide molecular beam epitaxy
Wenshan Chen, Kingsley Egbo, Joe Kler +3
Rutile GeO is a promising ultra-wide bandgap semiconductor for future power electronic devices whose alloy with the wide bandgap semiconductor rutile-SnO enables bandgap en…
On the critical competition between singlet exciton decay and free charge generation in non-fullerene-based organic solar cells with low energetic offsets
M. Pranav, A. Shukla, D. Moser +16
In this era of non-fullerene acceptor (NFA) based organic solar cells, reducing voltage losses while maintaining high photocurrents is the holy grail of current research. Recent fo…
Long-lived, pulse-induced absorption in solid solutions: the case of three intrinsic defect sites for electron localization with strong coupling
Niklas Dömer, Julian Koelmann, Mira Hesselink +6
Femto-/nanosecond pulse-induced, red and near-infrared absorption is studied in (LNT) solid solutions with the goal to probe the in…
ScN/GaN(): a new platform for the epitaxy of twin-free metal-semiconductor heterostructures
Philipp John, Achim Trampert, Duc Van Dinh +6
We study the molecular beam epitaxy of rock-salt ScN on the wurtzite GaN() surface. To this end, ScN is grown on free-standing GaN() substrates and self-ass…
Etching of elemental layers in oxide molecular beam epitaxy by O2-assisted formation and evaporation of their volatile suboxide: The examples of Ga and Ge
Wenshan Chen, Kingsley Egbo, Huaide Zhang +2
The delivery of an elemental cation flux to the substrate surface in the oxide molecular beam epitaxy (MBE) chamber has been utilized not only for the epitaxial growth of oxide thi…
Composition and optical properties of (In,Ga)As nanowires grown by group-III-assisted molecular beam epitaxy
M Gómez Ruiz, Aron Castro, Jesús Herranz +5
(In,Ga) alloy droplets are used to catalyse the growth of (In,Ga)As nanowires by molecular beam epitaxy on Si(111) substrates. The composition, morphology and optical properties of…
Sequential directional deposition of one-sided (In,Ga)N shells on GaN nanowires by molecular beam epitaxy
David van Treeck, Jonas Lähnemann, Guanhui Gao +3
Capitalizing on the directed nature of the atomic fluxes in molecular beam epitaxy, we propose and demonstrate the sequential directional deposition of lateral (In,Ga)N shells on G…
Growth mechanisms in molecular beam epitaxy for GaN-(In,Ga)N core-shell nanowires emitting in the green spectral range
David van Treeck, Jonas Lähnemann, Oliver Brandt +1
Using molecular beam epitaxy, we demonstrate the growth of (In,Ga)N shells emitting in the green spectral range around very thin (35 nm diameter) GaN core nanowires. These GaN nano…
Growth kinetics and substrate stability during high-temperature molecular beam epitaxy of AlN nanowires
Philipp John, Mikel Gómez Ruiz, Len van Deurzen +5
We study the molecular beam epitaxy of AlN nanowires between 950 and 1215 °C, well above the usual growth temperatures, to identify optimal growth conditions. The nanowires are gro…
Excitonic and deep-level emission from N- and Al-polar homoepitaxial AlN grown by molecular beam epitaxy
Len van Deurzen, Jashan Singhal, Jimy Encomendero +8
Using low-temperature cathodoluminescence spectroscopy, we study the properties of N- and Al-polar AlN layers grown by molecular beam epitaxy on bulk AlN{0001}. Compared to the bul…
In-situ study and modeling of the reaction kinetics during molecular beam epitaxy of GeO2 and its etching by Ge
Wenshan Chen, Kingsley Egbo, Hans Tornatzky +3
Rutile GeO2 has been predicted to be an ultra-wide bandgap semiconductor suitable for future power electronics devices while quartz-like GeO2 shows piezoelectric properties. To exp…
Large-area synthesis of ferromagnetic FeGeTe/graphene van der Waals heterostructures with Curie temperature above room temperature
H. Lv, A. da Silva, A. I. Figueroa +14
Van der Waals (vdW) heterostructures combining layered ferromagnets and other two-dimensional (2D) crystals are promising building blocks for the realization of ultra-compact devic…
Control over epitaxy and the role of the InAs/Al interface in hybrid two-dimensional electron gas systems
E. Cheah, D. Z. Haxell, R. Schott +12
In-situ synthesised semiconductor/superconductor hybrid structures became an important material platform in condensed matter physics. Their development enabled a plethora of novel…
Adsorption-controlled plasma-assisted molecular beam epitaxy of LaInO3 on DyScO3(110): Growth window, strain relaxation, and domain pattern
Georg Hoffmann, Martina Zupancic, Detlef Klimm +4
We report the growth of epitaxial LaInO3 on DyScO3(110) substrates by adsorption-controlled plasma-assisted molecular beam epitaxy (PA-MBE). The adsorption-controlled growth was mo…
Acceptor and compensating donor doping of single crystalline SnO (001) films grown by molecular beam epitaxy and its perspectives for optoelectronics and gas-sensing
Kingsley Egbo, Jonas Lähnemann, Andreas Falkenstein +2
(La and Ga)-doped tin monoxide (stannous oxide, tin (II) oxide, SnO) thin films were grown by plasma-assisted and suboxide molecular beam epitaxy with dopant concentrations ranging…
Carrier Recombination in Highly Uniform and Phase-Pure GaAs/(Al,Ga)As Core/Shell Nanowire Arrays on Si(111): Mott Transition and Internal Quantum Efficiency
Miriam Oliva, Timur Flissikowski, Michał Góra +7
GaAs-based nanowires are among the most promising candidates for realizing a monolithical integration of III-V optoelectronics on the Si platform. To realize their full potential f…
A route for the top-down fabrication of ordered ultrathin GaN nanowires
Miriam Oliva, Vladimir Kaganer, Maximilian Pudelski +5
Ultrathin GaN nanowires (NWs) are attractive to maximize surface effects and as building block in high-frequency transistors. Here, we introduce a facile route for the top-down fab…