129 citations
Counting papers with at most 25 authors, so collaboration author lists do not stand in for the people here.
- Paul Drude Institute for Solid State ElectronicsDE128 papers
- Leibniz Institute for Crystal GrowthDE14 papers
- Weierstrass Institute for Applied Analysis and StochasticsDE13 papers
- Centre National de la Recherche ScientifiqueFR9 papers
- RWTH Aachen UniversityDE8 papers
- Freie Universität BerlinDE6 papers
- Humboldt-Universität zu BerlinDE6 papers
- National Institute for Materials ScienceJP6 papers
- Universidad Autónoma de MadridES6 papers
- Weizmann Institute of ScienceIL6 papers
- Cornell UniversityUS5 papers
- Institute of Computational Mathematics and Mathematical GeophysicsRU5 papers
18 papers · 1 filter
Phase-selective growth of - vs -GaO and (InGa)O by In-mediated metal exchange catalysis in plasma-assisted molecular beam epitaxy
A. Ardenghi, O. Bierwagen, J. Lähnemann +4
Its piezo- and potentially ferroelectric properties make the metastable kappa polymorph of GaO an interesting material for multiple applications, while In-incorporation int…
High-resolution acoustic field mapping of GHz phononic crystals with atomic force microscopy
Pitanti, Alessandro, Yuan +5
On-chip technology based on acoustic waves is a strong asset in modern telecommunication with the prospects of becoming a cornerstone of next-generation devices. In this context, m…
SnO/-Ga2O3 vertical heterojunction diodes
Melanie Budde, Daniel Splith, Piero Mazzolini +6
Vertical heterojunction diodes were prepared by plasma-assisted molecular beam epitaxy of unintentionally-doped -type SnO layers with hole concentrations ranging from $p=10…
External control of GaN band bending using phosphonate self-assembled monolayers
T. Auzelle, F. Ullrich, S. Hietzschold +7
We report on the optoelectronic properties of GaN and surfaces after their functionalization with phosphonic acid derivatives. To analyze the possible correl…
The two-dimensional electron gas of the In2O3 surface: Enhanced thermopower, electrical transport properties, and its reduction by adsorbates or compensating acceptor doping
Alexandra Papadogianni, Julius Rombach, Theresa Berthold +4
In2O3 is an n-type transparent semiconducting oxide possessing a surface electron accumulation layer (SEAL) like several other relevant semiconductors, such as InAs, InN, SnO2, and…
Electrically driven exciton-polariton optomechanics at super high frequencies
Alexander S. Kuznetsov, Diego H. O. Machado, Klaus Biermann +1
Polaritons enable the resonant coupling of excitons and photons to vibrations in the application-relevant super high frequency (SHF, 3-30 GHz) domain. We introduce a novel platform…
Structural, optical, and electrical properties of unintentionally doped NiO layers grown on MgO by plasma-assisted molecular beam epitaxy
Melanie Budde, Carsten Tschammer, Philipp Franz +7
NiO layers were grown on MgO(100), MgO(110), and MgO(111) substrates by plasma-assisted molecular beam epitaxy under Ni-flux limited growth conditions. Single crystalline growth wi…
Assessment of AlGaN/AlN superlattices on GaN nanowires as active region of electron-pumped ultraviolet sources
I. Dimkou, A. Harikumar, F. Donatini +9
In this paper, we describe the design and characterization of 400-nm-long (88 periods) AlxGa1-xN/AlN (0 < x < 0.1) quantum dot superlattices deposited on self-assembled GaN nanowir…
Large non-reciprocal propagation of surface acoustic waves in epitaxial ferromagnetic/semiconductor hybrid structures
A. Hernández-Mínguez, F. Macià, J. M. Hernàndez +2
Non-reciprocal propagation of sound, that is, the different transmission of acoustic waves traveling along opposite directions, is a challenging requirement for the realization of…
Plasma-assisted molecular beam epitaxy of NiO on GaN(00.1)
Melanie Budde, Thilo Remmele, Carsten Tschammer +8
The growth of NiO on GaN(00.1) substrates by plasma-assisted molecular beam epitaxy under oxygen rich conditions was investigated at growth temperatures between 100 C and…
Electroluminescence and current-voltage measurements of single (In,Ga)N/GaN nanowire light-emitting diodes in the nanowire ensemble
David van Treeck, Johannes Ledig, Gregor Scholz +7
We present the combined analysis of the electroluminescence (EL) as well as the current-voltage (I-V) behavior of single, freestanding (In,Ga)N/GaN nanowire (NW) light-emitting dio…
Electronic properties of air-exposed GaN and surfaces after several device processing compatible cleaning steps
Thomas Auzelle, Florian Ullrich, Sebastian Hietzschold +6
We report on the electronic properties of GaN and surfaces after three different and subsequent device processing compatible cleaning steps: HCl etching, ann…
Generation and imaging of magnetoacoustic waves over millimetre distances
Blai Casals, Nahuel Statuto, Michael Foerster +7
Using hybrid piezoelectric/magnetic systems we have generated large amplitude magnetization waves mediated by magneto-elasticity with up to 25 degrees variation in the magnetizatio…
Influence of the source arrangement on shell growth around GaN nanowires in molecular beam epitaxy
David van Treeck, Sergio Fernández-Garrido, Lutz Geelhaar
In a combined experimental and theoretical study, we investigate the influence of the material source arrangement in a molecular beam epitaxy (MBE) system on the growth of nanowire…
Top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation
Sergio Fernández-Garrido, Thomas Auzelle, Jonas Lähnemann +3
We demonstrate the top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation of pre-patterned GaN(0001) layers grown by hydride vapor phase epitaxy on A…
The electrical conductivity tensor of -Ga2O3 analyzed by van der Pauw measurements: Inherent anisotropy, off-diagonal element, and the impact of grain boundaries
Christian Golz, Vanesa Hortelano, Fariba Hatami +3
The semiconducting oxide -Gallium Oxide (-GaO) possesses a monoclinic unit cell whose low symmetry generally leads to anisotropic physical properties. For example…
Quantum confinement of exciton-polaritons in a structured (Al,Ga)As microcavity
Alexander S. Kuznetsov, Paul L. J. Helgers, Klaus Biermann +1
The realization of quantum functionalities with polaritons in an all-semiconductor platform requires the control of the energy and spatial overlap of the wave functions of single p…
Bias-controlled spectral response in GaN/AlN single-nanowire ultraviolet photodetectors
Maria Spies, Martien I. Den Hertog, Pascal Hille +6
We present a study of GaN single-nanowire ultraviolet photodetectors with an embedded GaN/AlN superlattice. The heterostructure dimensions and doping profile were designed in such…