103 citations · 349 across the 12 of their papers we have counts for
12 papers
Unravelling the oxygen influence in cubic bixbyite InO on Raman active phonon modes by isotope studies
Johannes Feldl, Roland Gillen, Janina Maultzsch +5
In this study, we performed comprehensive investigations on the Raman active phonon modes in cubic bixbyite InO, an important oxide based, wide-bandgap semiconductor. Funda…
Excited-state band structure mapping
M. Puppin, C. W. Nicholson, C. Monney +10
Angle-resolved photoelectron spectroscopy is an extremely powerful probe of materials to access the occupied electronic structure with energy and momentum resolution. However, it r…
Molecular beam epitaxy of single-crystalline bixbyite (InGa)O films (): Structural properties and consequences of compositional inhomogeneity
Alexandra Papadogianni, Charlotte Wouters, Robert Schewski +9
In this work, we show the heteroepitaxial growth of single-crystalline bixbyite (InGa)O films on (111)-oriented yttria-stabilized zirconia substrates using plas…
Bandgap widening and behavior of Raman-active phonon modes of cubic single-crystalline (In,Ga)O alloy films
Johannes Feldl, Martin Feneberg, Alexandra Papadogianni +5
The influence of Ga incorporation into cubic InO on the electronic and vibrational properties is discussed for (In,Ga)O alloy films grown by molecular b…
Exchange-striction driven ultrafast nonthermal lattice dynamics in NiO
Y. W. Windsor, D. Zahn, R. Kamrla +7
We use femtosecond electron diffraction to study ultrafast lattice dynamics in the highly correlated antiferromagnetic (AF) semiconductor NiO. Using the scattering vector (Q) depen…
SnO/-Ga2O3 vertical heterojunction diodes
Melanie Budde, Daniel Splith, Piero Mazzolini +6
Vertical heterojunction diodes were prepared by plasma-assisted molecular beam epitaxy of unintentionally-doped -type SnO layers with hole concentrations ranging from $p=10…