103 citations · 349 across the 12 of their papers we have counts for
12 papers
Unravelling the oxygen influence in cubic bixbyite InO on Raman active phonon modes by isotope studies
Johannes Feldl, Roland Gillen, Janina Maultzsch +5
In this study, we performed comprehensive investigations on the Raman active phonon modes in cubic bixbyite InO, an important oxide based, wide-bandgap semiconductor. Funda…
Excited-state band structure mapping
M. Puppin, C. W. Nicholson, C. Monney +10
Angle-resolved photoelectron spectroscopy is an extremely powerful probe of materials to access the occupied electronic structure with energy and momentum resolution. However, it r…
Molecular beam epitaxy of single-crystalline bixbyite (InGa)O films (): Structural properties and consequences of compositional inhomogeneity
Alexandra Papadogianni, Charlotte Wouters, Robert Schewski +9
In this work, we show the heteroepitaxial growth of single-crystalline bixbyite (InGa)O films on (111)-oriented yttria-stabilized zirconia substrates using plas…
Bandgap widening and behavior of Raman-active phonon modes of cubic single-crystalline (In,Ga)O alloy films
Johannes Feldl, Martin Feneberg, Alexandra Papadogianni +5
The influence of Ga incorporation into cubic InO on the electronic and vibrational properties is discussed for (In,Ga)O alloy films grown by molecular b…
Exchange-striction driven ultrafast nonthermal lattice dynamics in NiO
Y. W. Windsor, D. Zahn, R. Kamrla +7
We use femtosecond electron diffraction to study ultrafast lattice dynamics in the highly correlated antiferromagnetic (AF) semiconductor NiO. Using the scattering vector (Q) depen…
SnO/-Ga2O3 vertical heterojunction diodes
Melanie Budde, Daniel Splith, Piero Mazzolini +6
Vertical heterojunction diodes were prepared by plasma-assisted molecular beam epitaxy of unintentionally-doped -type SnO layers with hole concentrations ranging from $p=10…
Plasma-assisted molecular beam epitaxy of SnO(001) films: Metastability, hole transport properties, Seebeck coefficient, and effective hole mass
Melanie Budde, Piero Mazzolini, Johannes Feldl +6
Transparent conducting or semiconducting oxides are important materials for (transparent) optoelectronics and power electronics applications. While most of these oxides can be dope…
Magnetic characteristics of epitaxial NiO films studied by Raman spectroscopy
J. Feldl, M. Budde, C. Tschammer +2
Raman spectroscopy is utilized to study the magnetic characteristics of heteroepitaxial NiO thin films grown by plasma-assisted molecular beam epitaxy on MgO(100) substrates. For t…
Structural, optical, and electrical properties of unintentionally doped NiO layers grown on MgO by plasma-assisted molecular beam epitaxy
Melanie Budde, Carsten Tschammer, Philipp Franz +7
NiO layers were grown on MgO(100), MgO(110), and MgO(111) substrates by plasma-assisted molecular beam epitaxy under Ni-flux limited growth conditions. Single crystalline growth wi…
Plasma-assisted molecular beam epitaxy of NiO on GaN(00.1)
Melanie Budde, Thilo Remmele, Carsten Tschammer +8
The growth of NiO on GaN(00.1) substrates by plasma-assisted molecular beam epitaxy under oxygen rich conditions was investigated at growth temperatures between 100 C and…
Signatures of free carriers in Raman spectra of cubic InO
Manfred Ramsteiner, Johannes Feldl, Zbigniew Galazka
We discuss the influence of free carriers on the Raman scattering in -type InO. For high-quality cubic single crystals, electronic single-particle excitations are reveal…
Time- and angle-resolved photoemission spectroscopy of solids in the extreme ultraviolet at 500 kHz repetition rate
M. Puppin, Y. Deng, C. W. Nicholson +8
Time- and angle-resolved photoelectron spectroscopy (trARPES) employing a 500 kHz extreme-ultravioled (XUV) light source operating at 21.7 eV probe photon energy is reported. Based…