103 citations · 349 across the 12 of their papers we have counts for
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Exchange-striction driven ultrafast nonthermal lattice dynamics in NiO
Y. W. Windsor, D. Zahn, R. Kamrla +7
We use femtosecond electron diffraction to study ultrafast lattice dynamics in the highly correlated antiferromagnetic (AF) semiconductor NiO. Using the scattering vector (Q) depen…
SnO/-Ga2O3 vertical heterojunction diodes
Melanie Budde, Daniel Splith, Piero Mazzolini +6
Vertical heterojunction diodes were prepared by plasma-assisted molecular beam epitaxy of unintentionally-doped -type SnO layers with hole concentrations ranging from $p=10…
Plasma-assisted molecular beam epitaxy of SnO(001) films: Metastability, hole transport properties, Seebeck coefficient, and effective hole mass
Melanie Budde, Piero Mazzolini, Johannes Feldl +6
Transparent conducting or semiconducting oxides are important materials for (transparent) optoelectronics and power electronics applications. While most of these oxides can be dope…
Magnetic characteristics of epitaxial NiO films studied by Raman spectroscopy
J. Feldl, M. Budde, C. Tschammer +2
Raman spectroscopy is utilized to study the magnetic characteristics of heteroepitaxial NiO thin films grown by plasma-assisted molecular beam epitaxy on MgO(100) substrates. For t…
Structural, optical, and electrical properties of unintentionally doped NiO layers grown on MgO by plasma-assisted molecular beam epitaxy
Melanie Budde, Carsten Tschammer, Philipp Franz +7
NiO layers were grown on MgO(100), MgO(110), and MgO(111) substrates by plasma-assisted molecular beam epitaxy under Ni-flux limited growth conditions. Single crystalline growth wi…