activity
20142026
most citedEffect of the quantum well thickness on the performance of InGaN photovoltaic cells

70 citations · 644 across the 34 of their papers we have counts for

collaborators

34 papers

physics.app-ph2026

Roadmap on UV-C photodetectors: materials, applications and industry perspectives

Fabien Massabuau, Drew Riley, Paul Meredith +44

UV-C photodetectors are poised to play an increasingly important role in future photonic technologies, driven by the rapid emergence of UV-C light sources and new wide bandgap semi…

cond-mat.mtrl-sci2023★ 16 cited

Ultraviolet Photodetectors based on GaN and AlGaN/AlN Nanowire Ensembles: Effects of Planarization with Hydrogen Silsesquioxane and Nanowire Architecture

E. Akar, I. Dimkou, A. Ajay +2

The interest in nanowire photodetectors stems from their potential to improve the performance of a variety of devices, including solar cells, cameras, sensors, and communication sy…

physics.app-ph2023★ 8 cited

AlGaN/AlN Stranski-Krastanov quantum dots for highly efficient electron beam pumped emitters: The role of miniaturization and composition to attain far UV-C emission

Jesus Cañas, Anjali Harikumar, Stephen T. Purcell +6

Conventional ultraviolet (UV) lamps for disinfection emit radiation in the 255-270 nm range, which poses a high risk of causing cancer and cataracts. To address these concerns, sol…

physics.app-ph2022★ 24 cited

Assessment of active dopants and p-n junction abruptness using in-situ biased 4D-STEM

Bruno C. da Silva, Zahra S. Momtaz, Eva Monroy +4

A key issue in the development of high-performance semiconductor devices is the ability to properly measure active dopants at the nanometer scale. 4D scanning transmission electron…

physics.optics2022★ 5 cited

Reduction of the lasing threshold in optically pumped AlGaN/GaN lasers with two-step etched facets

Sergi Cuesta, Lou Denaix, Florian Castioni +2

We report a two-step process to obtain smooth and vertical {10-10} m-plane facets in AlGaN/GaN separate confinement heterostructures designed to fabricate UV lasers emitting at 355…

cond-mat.mtrl-sci2021★ 4 cited

Comparison of the material quality of AlxIn1-xN (x ~ 0-0.50) films deposited on Si (100) and (111) by reactive RF sputtering

M. Sun, R. Blasco, M. de la Mata +5

Here, we compare the material quality of AlxIn1-xN layers deposited on Si with different crystallographic orientations, (100) and (111), via radio-frequency (RF) sputtering. To mod…