70 citations · 644 across the 34 of their papers we have counts for
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physics.app-ph2022★ 24 cited
Assessment of active dopants and p-n junction abruptness using in-situ biased 4D-STEM
Bruno C. da Silva, Zahra S. Momtaz, Eva Monroy +4
A key issue in the development of high-performance semiconductor devices is the ability to properly measure active dopants at the nanometer scale. 4D scanning transmission electron…
physics.optics2022★ 5 cited
Reduction of the lasing threshold in optically pumped AlGaN/GaN lasers with two-step etched facets
Sergi Cuesta, Lou Denaix, Florian Castioni +2
We report a two-step process to obtain smooth and vertical {10-10} m-plane facets in AlGaN/GaN separate confinement heterostructures designed to fabricate UV lasers emitting at 355…