70 citations · 644 across the 34 of their papers we have counts for
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P-i-n InGaN homojunctions (10-40% In) synthesized by plasma-assisted molecular beam epitaxy with extended photoresponse to 600 nm
S. Valdueza-Felip, A. Ajay, L. Redaelli +6
We report the influence of the In mole fraction on the material and electrical characteristics of p-i-n InxGa1-xN homojunctions (x = 0.10-0.40) synthesized by plasma-assisted molec…
UV Photosensing Characteristics of Nanowire-Based GaN/AlN Superlattices
Jonas Lähnemann, Martien Den Hertog, Pascal Hille +6
We have characterized the photodetection capabilities of single GaN nanowires incorporating 20 periods of AlN/GaN:Ge axial heterostructures enveloped in an AlN shell. Transmission…
Effect of the quantum well thickness on the performance of InGaN photovoltaic cells
L. Redaelli, A. Mukhtarova, S. Valdueza-Felip +7
We report on the influence of the quantum well thickness on the effective band gap and conversion efficiency of In0.12Ga0.88N/GaN multiple quantum well solar cells. The band-to-ban…
Design of broadband high-efficiency superconducting-nanowire single photon detectors
Luca Redaelli, Gabriele Bulgarini, Sergiy Dobrovolskiy +4
In this paper several designs to maximize the absorption efficiency of superconducting-nanowire single-photon detectors are investigated. Using a simple optical cavity consisting o…